Low frequency noise measurements are among the most sensitive tools for the investigation of the quality and of the reliability of semiconductor devices. The sensitivity that can be obtained depends on the background noise of the low noise preamplifier coupled to the device under test (DUT) that, at very low frequencies, is dominated by flicker noise. The low frequency noise produced by the DUT, on the other end, is very often the most interesting signal to be detected and analyzed. In this work we propose a very simple topology for the realization of a general purpose low noise preamplifier whose noise performances, at very low frequencies (below 10 Hz), are significantly better than those that can be obtained by the most popular commercial instrumentation. Indeed, a gain of 80 dB with a pass band extending from a few tens of mHz up to a few kHz with an equivalent input voltage noise as low as 14 nV/square root(Hz) (100 mHz), 1.4 nV/square root(Hz) (1 Hz), 1.0 nV/square root(Hz) (10 Hz), and 0.8 nV/square root(Hz) (1 kHz) are consistently obtained by using quite standard electronic components and with no need for trimming and/or calibration steps. Moreover, the junction field-effect transistor input stage of the amplifier is characterized by an equivalent input current noise below 4 fA/square root(Hz) in the entire bandwidth, resulting in negligible background noise degradation for DUT impedances in excess of 100 kohms.

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In this paper, we present an ultraflexible tactile sensor, in a piezo-eletricoxide-semiconductor FET configuration, composed by a poly[vinylidenefluoride-co-trifluoroethylene] capacitor with an embedded readout circuitry, based on nMOS polysilicon electronics, integrated directly on polyimide. The ultraflexible device is designed according to an extended gate configuration. The sensor exhibits enhanced piezoelectric properties, thanks to the optimization of the poling procedure (with electric field up to 3 MV/cm), reaching a final piezoelectric coefficient d 33 of 47 pC/N. The device has been electromechanically tested by applying perpendicular forces with a minishaker. The tactile sensor, biased in a common-source arrangement, shows a linear response to increasing sinusoidal stimuli (up to 2 N) and increasing operating frequencies (up to 1200 Hz), obtaining a response up to 430 mV/N at 200 Hz for the sensor with the highest value of d 33 . The sensor performances were also tested after several cycles of controlled bending in different amount of humidity with the intent to investigate the device behavior in real conditions. Index Terms-Piezoelectric-oxide-semiconductor field effect transistor (POSFET), polysilicon TFT, poly[vinylidenefluorideco-trifluoroethylene] (PVDF-TrFE), tactile sensor, ultra-flexible polyimide.