Ionizing radiation influence on 28-nm MOS transistor's low-frequency noise characteristics
M. Apro,
A. Michalowska-Forsyth
Abstract:In this paper, we explore the transitions of low-frequency noise characteristics in high-k metal-gate bulk CMOS transistors induced by Total Ionizing Dose (TID). Due to the strong bias dependence of the noise characteristics, differentiating between noise shifts caused by the effective biasing change and the contribution of the newly generated traps becomes extremely challenging. In order to better understand the effects of irradiation, transistor noise had to be characterized at several biasing points, both i… Show more
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