Influence of defect states on the nonlinear optical properties of GaN

Haag, H.; Hönerlage, B.; Briot, Olivier; Aulombard, Roger

doi:10.1103/physrevb.60.11624

Cited by 49 publications

(40 citation statements)

References 37 publications

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“…This indicates that the YL structure is characterized by a number of deep levels with different energies. 7 Figure 1͑b͒ shows a typical excitation energy dependence of YL intensity, i.e., the multiphoton PLE of a YL band. Note that the YL intensity at other detection energies exhibited similar behavior.…”

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confidence: 99%

“…1 Recently, the optical nonlinearities of these materials have attracted increased interest as factors for determining device performance. [2][3][4][5][6][7][8][9][10][11] In addition to the technological importance, these nonlinear absorption studies also provide important insights into the fundamental physics of materials, such as band structures, 6 relaxation processes, [7][8][9][10] and electron-phonon interactions. 11 One characteristic of GaN observed in photoluminescence ͑PL͒ spectra is yellow luminescence ͑YL͒.…”

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confidence: 99%

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Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Toda

Matsubara

Morita

et al. 2003

Applied Physics Letters

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Optical nonlinearity in the yellow luminescence (YL) band of GaN was investigated using thick bulk samples. Transient pump–probe measurements revealed strong transmission changes due to two-photon absorption(TPA) even at the middle of the YL band. The TPA coefficient evaluated reaches ∼5 cm/GW∼5 cm/GW at about 1.3 eV, which was as large as the mid-gap resonance. The TPA spectrum clearly showed that the observed large nonlinearity originated from the YL band. On the basis of efficient TPA in the YL band, relaxation processes in the multiphoton-induced photoluminescence excitation spectrum were also investigated

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confidence: 99%

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confidence: 99%

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Toda

Matsubara

Morita

et al. 2003

Applied Physics Letters

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“…Previous TRPL investigations show a clear controversy between decay times measured for the yellow emission. [3][4][5] In particular, nonexponential transients with decay times in the 10 Ϫ1 -10 3 s range have been reported 3,4 and explained in the frame of the Thomas-Hopfield model 20 for DAP recombination. In principle, our exponential transients with associated decay times of hundreds of s do not agree with the DAP recombination theory, which predicts a wide distribution of instantaneous decay times extending from the ns to the ms range.…”

Section: Figmentioning

confidence: 99%

“…The origin of this luminescence remains unclear and different models [1][2][3] have been proposed to explain the emission. Variations in peak position, shape and decay times reported in different studies [3][4][5] suggest that several bands involving different defects could contribute to the mentioned luminescence. 6 On the contrary, deep-level-related emissions in the green and red ranges of the visible spectrum are less frequently observed in undoped GaN.…”

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confidence: 99%

Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

Dı́az-Guerra

Piqueras

Cavallini

2003

Applied Physics Letters

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The temporal behavior of deep-level luminescence emissions in undoped hydride-vapor-phase-epitaxy GaN layers of different thicknesses has been investigated by time-resolved cathodoluminescence (TRCL). The complex nature of the yellow luminescence is revealed in the TRCL spectra by the presence of two bands peaked at 2.22 and 2.03 eV. A red band with a decay time of 700 μs, centered at about 1.85 eV, dominates spectra recorded for long delay times. Exponential transients with associated decay times of hundreds of μs were measured at 87 K for all the deep-level emissions found in the layers.

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“…Moreover, photoluminescence ͑PL͒ decay times have been measured by different research groups for the yellow band range from 1 ms to less than 1 ns. 5,8,9 Variations in peak position, shape, and decay times reported in different studies suggest that several bands involving different defects could contribute to this emission. [10][11][12] Various spectroscopic techniques have been applied to the study of gap states in GaN.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN

Dı́az-Guerra

Piqueras

Castaldini

et al. 2003

Journal of Applied Physics

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Time-resolved cathodoluminescence ͑TRCL͒ and photocurrent ͑PC͒ spectroscopies have been applied to the study of the yellow band of Si-doped GaN. Measurements carried out combining both techniques unambiguously reveal the complex nature of this broad emission and confirm that different deep defect levels are involved in the observed luminescence. Five emission bands centered at 1.89, 2.03, 2.16, 2.29, and 2.38 eV were found by steady state and time-resolved CL investigations, while PC spectra showed four transitions at about 2.01, 2.14, 2.28, and 2.43 eV. The behavior of the deep-level emissions intensity as a function of the excitation pulse width as well as their decay times were investigated by TRCL. A decay time of 245 s was measured for the 2.29 eV emission band, while longer decay times of 315 and 340 s were found, respectively, for the 2.16 and 2.38 eV bands, in agreement with TRCL spectra. The appearance of the 2.03, 2.16, 2.29 eV and 2.38 -2.43 eV peaks both in PC and CL spectra suggests that these bands are related to deep acceptor to band transitions, as supported by the single exponential character of the corresponding decay transients.

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Influence of defect states on the nonlinear optical properties of GaN

Cited by 49 publications

References 37 publications

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN

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