Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

Dı́az-Guerra, C.; Piqueras, J.; Cavallini, A.

doi:10.1063/1.1565501

Cited by 17 publications

(14 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It also helps in delineating the PL bands which are overlapped in the SSPL spectrum. Transient PL for the YL band in GaN has been investigated by several authors, 76,87,110,142,143,152,161,166,[188][189][190][191][192] and the results have often been controversial. For example, the reported PL lifetime for the YL ranges from 20 ps ͑Ref.…”

Section: Time-resolved Plmentioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,805

119

1,666

View full text Add to dashboard Cite

Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

show abstract

Section: Time-resolved Plmentioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,805

119

1,666

View full text Add to dashboard Cite

show abstract

“…(MBE) 4 , and metal-organic chemical vapor deposition (MOCVD) 5,6,7 to hydride vapor phase epitaxy (HVPE) 7,8,9 . In some samples, the YL is accompanied by a red luminescence (RL) 7,10 or a green luminescence (GL) 8,11 .…”

mentioning

confidence: 99%

“…18 Dı´az-Guerra et al found two YL bands peaked at 2.22 and 2.03 eV, and a RL band at about 1.85 eV that dominates spectra recorded for long delay times. 10 Reshchikov et al first observed the fine structure of the RL band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV. 25 Then they attributed this fine structure to a YL band often covered by the RL band.…”

mentioning

confidence: 99%

Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Xie

Sui

Buckeridge

et al. 2018

Applied Physics Letters

View full text Add to dashboard Cite

Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including the ubiquitous yellow luminescence signature observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes.

show abstract

“…According to recent studies, the emissions contributing at 90 K to this complex band can be attributed to radiative transitions from the conduction band to deep acceptor levels. 7 The narrow emission centered at 1.791 eV arises from the sapphire substrate.…”

mentioning

confidence: 99%

Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching

Dı́az-Guerra

Piqueras

Popa

et al. 2005

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150–250 nm formed near the surface of the as-grown GaN layers branch into nanowires with diameters of 20–60 nm, while islands with coral-like relief were observed at the bottom of the etched areas. CL emission of the observed nanostructures is dominated by free electron to acceptor transitions. Local CL spectra provide direct evidence of the existence of either compressive or tensile stress in different nanostructures. No free exciton luminescence was observed in GaN nanowires, supporting their relation to threading dislocations.

show abstract

Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN

Cited by 17 publications

References 21 publications

Luminescence properties of defects in GaN

Luminescence properties of defects in GaN

Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching

Contact Info

Product

Resources

About