In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs

Wolf, Ingrid De; Simons, V.; Cherman, Vladimir; Labie, Riet; Vandevelde, Bart; Beyne, Eric

doi:10.1109/ectc.2012.6248851

Cited by 29 publications

(16 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Especially the radial tensile stress component plays an important role. This stress is typically studied using Raman spectroscopy [9], but this technique is time consuming, less sensitive than polaroscopy, and it is difficult to obtain information on the separate stress tensor components. Figure 10 shows the SIREX map of a matrix of 36 single Cu TSVs, with 5 µm diameter and 50 mm length.…”

Section: D Silicon Technologymentioning

confidence: 99%

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Herms

Wagner

Молчанов

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

SIRD (Scanning Infrared Depolarization Imager) and SIREX (Scanning Infrared Stress Explorer) are measurement systems to evaluate and visualize the stress distribution in semiconductor materials and devices. Some main fields of application are crystal growth, high temperature processing of silicon wafers as well as the 3D‐structuring of silicon‐based microelectronic devices. The used strategies of measurement are different. SIRD and SIREX are equipped with versatile software packages that allow to separate defect‐related stress states of interest, for instance slip‐lines in GaN‐overgrown silicon. Micro‐holes fabricated for wafer marking and 3D TSV (through silicon vias) structures have been analyzed with micrometer resolution. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: D Silicon Technologymentioning

confidence: 99%

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Herms

Wagner

Молчанов

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

show abstract

“…In parallel, micro-Raman spectroscopy has become a popular technique for evaluating the near-surface silicon stress around TSVs with a lateral resolution in the order of 0.5 lm depending on the laser wavelength [10]. Nevertheless the interpretation of stress measured this way is not straight forward since the Raman frequency shift is a complex function of in-plane and out-of-plane stress, neglecting contributions of shear stress components [11,12]. On the contrary, synchrotron-based X-ray diffraction enables the calculation of all principal strain components in silicon and copper vias [13,14,15].…”

Section: Introductionmentioning

confidence: 99%

Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

Vianne

Escoubas

Richard

et al. 2015

Microelectronic Engineering

View full text Add to dashboard Cite

“…33 Raman peak shifts proportionally to the mechanical stress in Si at a rate of −434.5 MPa∕cm. 31,36,37 To properly characterize the mechanical stress-induced carrier mobility variations within a typical mobility variability tolerance of 5% for the KOZ, a mechanical stress measurement resolution of ∼50 MPa [equivalent to ∼0.12 cm −1 in Raman shift (wavenumber) resolution] is required. The measurement repeatability of the MRS-300 system using a reference Si (100) wafer was tested for 1 year.…”

Section: Raman Spectra From Stressed Simentioning

confidence: 99%

“…[25][26][27][28][29][30][31][32] Micro-Raman spectroscopy is more suitable from a practical point of view. Since the probing depth of Raman spectroscopy is dependent on the excitation wavelength, choice of proper excitation wavelength is very important.…”

Section: Introductionmentioning

confidence: 99%

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Yoo¹,

Kim

Han

2014

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Abstract. Characterization of silicon stress near copper (Cu)-filled through-silicon via(s) (TSVs) was demonstrated using high-resolution micro-Raman spectroscopy. For depth profiling of Si stress distribution near TSVs, a polychromator-based, multiwavelength excitation Raman measurement with different probing depths was used. The design concept of the polychromator-based, multiwavelength micro-Raman spectroscopy system, including the importance of the high-spectral resolution and multiwavelength excitation capability in three-dimensional (3-D) Si stress characterization, was described. Silicon stress near Cu-filled TSVs, with various sizes and layouts, was measured and analyzed before and after Cu annealing steps. Main factors impacting Si stress near Cu-filled TSVs are analyzed based on Raman characterization results on various types of TSV structures, layouts, and Cu annealing conditions. Large variations in Si stress in TSV arrays were measured in wafers with poor Cu fill characteristics and in wafers annealed in nonoptimized conditions. The Cu annealing sequence and annealing conditions are found to be significantly important for managing Si stress and the reliability of Cu-filled TSVs. Substantially lower Si stress was measured near Cu-filled TSVs with voids. Multiwavelength microRaman spectroscopy can be used as a very effective noncontact, nondestructive, inline TSV process and Si stress monitoring technique.

show abstract

In-depth Raman spectroscopy analysis of various parameters affecting the mechanical stress near the surface and bulk of Cu-TSVs

Cited by 29 publications

References 13 publications

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Contact Info

Product

Resources

About