Strain and tilt mapping in silicon around copper filled TSVs using advanced X-ray nano-diffraction

A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon

“…They reported that the tilt and the strain distribution mappings result from the (004) and (113) Bragg reflections. Moreover, as far as applications to the microelectronics industry are concerned, Vianne et al (2015) have investigated thermo-mechanical strain, induced by a through-silicon via process in silicon, using K-map measurements combined with finite element modelling.…”

Through-silicon via-induced strain distribution in silicon interposer

“…For each (x, y) spatial position, a 3D reciprocal space map of the Si Bragg peak is obtained and the associated strain can be determined. 15,16 In situ annealing and simultaneous K-Map experiments were conducted on the same sample. For this purpose, an ultrahigh vacuum chamber with a beryllium dome was mounted on the diffractometer stage, and the sample was heated up to approximately 400 C, which corresponds to the annealing temperature of copper TSV.…”

“…Strain values at the elements nodes ( xx , zz , and xz ) are processed to calculate the strain along the [335] crystallographic direction and are compared with the experimental strain field measured by the K-Map technique. 16 For that purpose, one must consider the absorption of the incident and exit X-ray beams diffracted by the sample. Indeed, due to the scattering geometry and the attenuation of X-rays in matter, the intensity collected on the detector depends on the (x, y) position of the beam spot relative to the sample surface (see Fig.…”

“…These results are consistent with the previous observations. 16 The tensile strain in the [110] direction in the 2D strain maps indicates a tensile state of stress in Cu TSV at room temperature. The shadowing effect of the Cu TSV introduces a dissymmetry in the strain field.…”