Vis- and Raman spectroscopy provided more insight into the molecular nature of the radiochromic properties of EBT3 films through the identification of the excited states of PDA and the presence of two PDA conformations. The improved knowledge on the molecular composition of EBT3's active layer provides a framework for future fundamental modeling of the dose-response.

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This paper describes the impact of various defect types on the junction leakage in highly doped drain p+∕n junctions, fabricated on strained silicon/relaxed silicon–germanium (SiGe) virtual substrates. The SiGe substrates were fabricated with a thin buffer-layer scheme, using a carbon-doped layer to induce a high relaxation degree of the virtual substrate. Threading dislocations, carbon-induced defects, and residual implantation damage each have a distinct effect on the junction leakage, generation lifetime, and high-temperature behavior of the diodes. It is shown that threading dislocations degrade the junction quality at room temperature. However, the high-temperature behavior of these junctions is diffusion-dominated. When present in the depletion region, carbon-induced defects cause a large generation current inside the SiGe diodes, a behavior that is dominant in the full temperature range investigated (20°C