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The need for highly integrable and programmable analog-to-digital converters (ADCs) is pushing towards the use of dynamic regenerative comparators to maximize speed, power efficiency and reconfigurability. Comparator thermal noise is, however, a limiting factor for the achievable resolution of several ADC architectures with scaled supply voltages. While mismatch in these comparators can be compensated for by calibration, noise can irreparably hinder performance and is less straightforward to be accounted for at design time. This paper presents a method to estimate the input referred noise in fully dynamic regenerative comparators leveraging a reference architecture. A time-domain analysis is proposed that accounts for the time varying nature of the circuit exploiting some basic results from the solution of stochastic differential equations. The resulting symbolic expressions allow focusing designers' attention on the most influential noise contributors. Analysis results are validated by comparison with electrical simulations and measurement results from two ADC prototypes based on the reference comparator architecture, implemented in 0.18-mu m and 90-nm CMOS technologies

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As scaling becomes increasingly difficult, 3D integration has emerged as a viable alternative to achieve the requisite bandwidth and power efficiency challenges. However mechanical stress induced by the through silicon vias (TSV) is one of the key constraints in the 3D flow that must be controlled in order to preserve the integrity of front end devices. For the first time an extended and comprehensive study is given for the stress induced by single-and arrayed TSVs and its impact on both analog and digital FEOL devices and circuits. This work provides a complete experimental assessment and quantifies the stress distribution and its effect on front end devices. By using a combined experimental and theoretical approach we provide a framework that will enable stress aware design and the right definition of keep out zone and ultimately save valuable silicon area.