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We present physical and electrical evidence of the Thomson The line-type PCM cells were fabricated as follows (Fig. 1). thermo-electric effect in line-type phase-change memory Two tungsten electrode pads were defined by a single cells. This causes a shift of the molten zone during RESET damascene process. A doped SbTe layer was then deposited programming towards the anode contact, and as a by sputtering, and structured by commonly used 193 nm consequence the phase change material (PCM) design at the photolithography and reactive ion etching (RIE). Three contact area has a significant influence on the program different line cell structures were defined: a fine line cell conditions. First statistical studies showed a reduction of (Fig. la), a line cell with flap-like PCM extensions at the minimum Reset currents by 5% and Set voltages by 28% contact area with the W electrode pads, i.e. so-called "Dogwhen PCM extensions around the anode are used instead of Bone" cell (Fig. lb), and an asymmetric T-shaped cell with fine line contacts. This Thomson effect remains important flap extension at one contact side only (Fig. 1 c). Line widths with further cell scaling.ranged between llOnm-300nm, and line lengths between 380-740nm. After patterning, the PCM cells were passivated
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