Improvement of reliability characteristics using the N&lt;inf&gt;2&lt;/inf&gt; implantation in SOHOS flash memory

Park, Jeong-Gyu; Oh, Jin Kyung; Seung-Dong, Yang; Jeong, Kwang‐Seok; Kim, Yumi; Yun, Ho‐Jin; Lee, Hi‐Deok; Lee, Ga‐Won

doi:10.1109/nmdc.2010.5652151

Cited by 3 publications

(1 citation statement)

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“…This result is in agreement with our previous report. 12 Therefore, the retention characteristic improvement in the N 2 implantation device is due to an increased generation of oxide traps and an increase in the potential barrier blocking the leakage path in the tunneling oxide. 1…”

Section: Resultsmentioning

confidence: 99%

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation

Sd¹,

Ks²,

Hj³

et al. 2013

j nanosci nanotechnol

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In this paper, we fabricate planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and the planar-type SOHOS devices with N2 implantation of 3 x 10(15) dose in a tunneling oxide to determine the impact of N2 implantation in the tunneling oxide of a memory device. The N2 implantation device has better retention characteristics than the device with no implantation. In order establish the correlation between N2 implantation and retention characteristic improvement, the low frequency noise (1/f noise) characteristic is investigated. The normalized drain current noise (S(ID)/I(D)2) level of the N2 implantation device is higher than that of the device with no implantation, which means that N2 implantation causes more trap formation near the interface. Considering that N2 implantation does not affect the DC transfer characteristics, such as mobility and sub-threshold slope, this finding indicates that the increase in the 1/f noise level is due to oxide traps rather than to interface traps. Therefore, the retention characteristic improvement in the N2 implantation device can be explained by the generation of higher number of oxide traps and an increase in the potential barrier blocking the leakage path in the tunneling oxide.

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Section: Resultsmentioning

confidence: 99%

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation

Sd¹,

Ks²,

Hj³

et al. 2013

j nanosci nanotechnol

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Materials and Device Reliability in SONOS Memories

Ramkumar

2017

Charge-Trapping Non-Volatile Memories

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Thermal Annealing for Improving Gold Nano-particles Charge Trapping Layer Nonvolatile Memory Reliability Applications

You

Lin

2014

2014 International Symposium on Computer, Consumer and Control

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Improvement of reliability characteristics using the N<inf>2</inf> implantation in SOHOS flash memory

Cited by 3 publications

References 4 publications

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation

Materials and Device Reliability in SONOS Memories

Thermal Annealing for Improving Gold Nano-particles Charge Trapping Layer Nonvolatile Memory Reliability Applications

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Improvement of reliability characteristics using the N<inf>2</inf> implantation in SOHOS flash memory

Cited by 3 publications

References 4 publications

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N2 Implantation

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N2 Implantation

Materials and Device Reliability in SONOS Memories

Thermal Annealing for Improving Gold Nano-particles Charge Trapping Layer Nonvolatile Memory Reliability Applications

Contact Info

Product

Resources

About

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation

Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N₂ Implantation