Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

Park, Ji-in; Lim, Yooseong; Jang, M. S.; Choi, Sooseok; Hwang, Namgyung; Yi, Moonsuk

doi:10.1016/j.materresbull.2017.05.001

Cited by 29 publications

(20 citation statements)

References 19 publications

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“…In general, as the concentration of Al increases, the mobility of the TFT decreases and the V on value shifts to positive values. [ 26 ] This is because Al suppresses the generation of V o , which is the donor of the oxide semiconductor, and the carrier concentration decreases. The mobilities of the three IAZO TFTs can be clearly explained by the role of Al.…”

Section: Resultsmentioning

confidence: 99%

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Woo

Cho

Park

2023

Adv Materials Inter

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In particular, the high mobility of oxide semiconductors compared to amorphous Si (a-Si) is suitable for achieving highresolution, high-driving frequency displays, and the amorphous phase of oxide semiconductors can solve the issues caused by grain boundaries, which is a fatal problem of low-temperature poly-Si (LTPS). [3][4][5][6] In addition, because oxide semiconductors have high back-end-ofline (BEOL) compatibility, research on their application in memory devices is also actively progressing. [7] The extremely low off-current of oxide semiconductors can improve the retention of dynamic random-access memory (DRAM) [8,9] by lowering the charge loss through the transistor, and oxide semiconductors exhibit good compatibility with various insulating layers, allowing them to be used as semiconductor materials for NAND flash [10,11] or ferroelectric random-access memory (FeRAM). [12] For these various applications of oxide semiconductors, it is important to understand the role of the elements in oxide semiconductors to optimize the characteristics of thin films and devices. In particular, the characteristics of the devices can vary dramatically depending on the ratio of the cations in the oxide semiconductors. In the case of InGaZnO (IGZO), a representative quaternary oxide semiconductor, the role of each cation composition is already known, and studies are being conducted to determine their optimal composition. [4,[13][14][15][16] In is known to form a path for electrons to move through a large sphere-shaped 5s orbital. [14] Therefore, as the composition ratio of In increases, mobility increases; however, stability can be degraded owing to weak bonding between In and O. Moreover, Zn contributes to the formation of a network of oxide semiconductors. Finally, Ga is known as a carrier suppressor and long-range stabilizer of IGZO. [1] Ga 3+ forms a stronger chemical bond with O 2− than with Zn 2+ or In 3+ ; therefore, the oxygen vacancy (V o ), which is one of the reasons for carrier formation and instability, can be suppressed. [17] However, several issues with IGZO arise from this Ga composition. For a carrier suppressor, the binding energy between Ga and O is weak, and IGZO has a relatively narrow band gap, which causes instability under illumination. [18,19] Additionally, inexpensive carrier suppressor elements that can replace relatively expensive Ga are required. From these points of view, research on InAlZnO (IAZO) using Al as a replacement element for Ga is being conducted. [20][21][22] Oxide semiconductors are promising semiconducting materials for next-generation thin-film transistors (TFTs). The role of the cations should be considered in the design of oxide semiconductors suitable for various applications. Ga has been widely used as a carrier suppressor in oxide semiconductors; however, research has recently been conducted to replace it with Al, which is cheaper and forms a stronger bond with O. Deposition using plasmaenhanced atomic layer deposition (PEALD) is very useful for controlling the composition of...

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Section: Resultsmentioning

confidence: 99%

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Woo

Cho

Park

2023

Adv Materials Inter

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“…It has been reported that Si and Al ions can act as oxygen binders and reduce oxygen vacancies (V O ) in oxide films . While Ga is commonly used as a carrier suppressor in indium–zinc oxide (IZO) and ITO, these metal (i.e., Si and Al) atoms are promising alternatives for Ga. ,, This may be due to the low standard electrode potential (SEP) of Si (−1.697 V) and Al (−1.66 V), which strengthen the metal oxide bond more effectively than Ga (SEP: −0.52 V) in oxide films. − …”

Section: Resultsmentioning

confidence: 99%

Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film Transistors

Hong

Lee

et al. 2020

ACS Appl. Mater. Interfaces

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A simple fabrication method for homojunction-structured Al-doped indium–tin oxide (ITO) thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed Al2O3 passivation layer with specific line (W Al2O3 ) is proposed. After EHD jet printing, the specific region of the ITO film below the Al2O3 passivation layer changes from a conducting electrode to a semiconducting channel layer simultaneously upon the formation of the passivation layer during thermal annealing. The channel length of the fabricated TFTs is defined by W Al2O3 , which can be easily changed with varying EHD jet printing conditions, i.e., no need of replacing the mask for varying patterns. Accordingly, the drain current and resistance of the fabricated TFTs can be modified by varying the W Al2O3 . Using the proposed method, a transparent n-type metal–oxide–semiconductor (NMOS) inverter with an enhancement load can be fabricated; the effective resistance of load and drive TFTs is easily tuned by varying the processing conditions using this simple method. The fabricated NMOS inverter exhibits an output voltage gain of 7.13 with a supply voltage of 10 V. Thus, the proposed approach is promising as a low-cost and flexible manufacturing system for multi-item small-lot-sized production of Internet of Things devices.

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“…The combination of In 2 O 3 , Al 2 O 3 , and SnO 2 in a quaternary heterostructure is a promising material combination to study the influence of a wide band gap oxide like aluminum oxide with a large oxophilicity on the semiconducting properties of a thin-film metal oxide combination in a TFT device. 26 Such studies are meaningful in order to gain a further understanding on the influence and control-mechanisms of oxygen vacancies (V O ) which are responsible for the charge conduction in thinfilm oxide semiconductors. [27][28][29] Herein, we have investigated the influence of aluminum oxide doping on binary thin-film heterostructures composed of In 2 O 3 and SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

2022

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Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

Cited by 29 publications

References 19 publications

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film Transistors

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

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