(1) Background: The purpose of this study was to determine whether preemptive duloxetine in patients with central sensitization (CS) is effective for acute postoperative pain control and wound healing following total knee arthroplasty (TKA). (2) Methods: CS was defined as a score of 40 points or higher on the Central Sensitization Inventory (CSI) survey. Thirty-nine patients with CS were randomly assigned to either the duloxetine group (n = 19) or the placebo group (n = 20). The duloxetine group took duloxetine 30 mg once a day, while the placebo group took the placebo medication once a day. A pain visual analog scale (VAS) and the Brief Pain Inventory (BPI), wound complications, the temperature of the surgical site, and adverse events were investigated. Skin temperature was measured at the center of the patella using a portable digital thermometer. (3) Results: The duloxetine group reported significantly lower pain VAS scores during follow-up periods up to 6 weeks after surgery (all p < 0.05). BPI interference also showed significantly superior results in the duloxetine group after surgery (all p < 0.05). Although there was no difference in the rate of wound complications between the two groups (p > 0.05), the duloxetine group showed significantly lower wound temperature than the placebo group during the follow-up period (all p < 0.05). (4) Conclusion: In this study, preemptive duloxetine effectively reduced pain and lowered wound temperature following TKA in CS patients.
We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.
A simple fabrication
method for homojunction-structured Al-doped
indium–tin oxide (ITO) thin-film transistors (TFTs) using an
electrohydrodynamic (EHD) jet-printed Al2O3 passivation
layer with specific line (W
Al2O3
) is proposed. After EHD jet printing, the specific
region of the ITO film below the Al2O3 passivation
layer changes from a conducting electrode to a semiconducting channel
layer simultaneously upon the formation of the passivation layer during
thermal annealing. The channel length of the fabricated TFTs is defined
by W
Al2O3
, which
can be easily changed with varying EHD jet printing conditions, i.e.,
no need of replacing the mask for varying patterns. Accordingly, the
drain current and resistance of the fabricated TFTs can be modified
by varying the W
Al2O3
. Using the proposed method, a transparent n-type metal–oxide–semiconductor
(NMOS) inverter with an enhancement load can be fabricated; the effective
resistance of load and drive TFTs is easily tuned by varying the processing
conditions using this simple method. The fabricated NMOS inverter
exhibits an output voltage gain of 7.13 with a supply voltage of 10
V. Thus, the proposed approach is promising as a low-cost and flexible
manufacturing system for multi-item small-lot-sized production of
Internet of Things devices.
In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm2/Vs, on-off ratio increased from 8.9 × 107 to 7.96 × 109, and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 °C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.
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