Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

Büschges, M. Isabelle; Trouillet, Vanessa; Schneider, Jörg J.

doi:10.1039/d2tc00285j

Cited by 4 publications

(2 citation statements)

References 61 publications

(120 reference statements)

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“…For example, for indium oxide doped with tin and aluminum, the effect of light depended on the amount of tin. [ 46 ] At higher Sn contents, the TFT demonstrated a higher OFF current, but also a higher sensitivity to light. The authors claimed that the electrons are excited from gap states near the valence band.…”

Section: Photosensitivity Of A‐snox Tftsmentioning

confidence: 99%

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Avis,

Billah,

Jang

2024

Advanced Photonics Research

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Amorphous tin oxide (a‐SnOx) is a potential transparent oxide semiconductor candidate for future large‐area electronic applications. The thin‐film transistor (TFT) mobilities reach ≈100 cm2 Vs−1, a mobility higher than other multiple cation‐based oxide semiconductor TFTs. Few optical properties have been reported so far and therefore both the effect of visible light and negative bias illumination stress (NBIS) on a‐SnOx TFT performances, known to dramatically impact oxide semiconductor‐based TFTs, have been investigated. The variation of density of states (DOS) due to NBIS by device simulation is analyzed, and a fourfold increase of the donor‐like states and a decrease in the band edge DOS from 2.3 to 2.0 × 1019 cm−3 eV−1 are showed. The evaluation of the effect of neutral, singly, and doubly ionized oxygen vacancies by density functional theory using 95 atoms reveals not only states in the gap of SnO2, but also variations in the electron density, and modifications in the crystal parameters compared to a structure without an oxygen vacancy. Material and device simulation analysis reveal that the oxygen vacancies have a dramatical impact on the DOS in the gap of SnO2 and can explain the NBIS phenomenon observed in a‐SnOx TFT.

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Section: Photosensitivity Of A‐snox Tftsmentioning

confidence: 99%

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Avis,

Billah,

Jang

2024

Advanced Photonics Research

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“…Using table 1, we determined that studies of indium-based oxide semiconductors have greatly increased since 2021. Not only binary In 2 O 3 [42][43][44][45][46][47][48][49], but also a ternary as IGO [59][60][61][62], IZO [62,63], In-Al-O (IAO) [64,65] and ITO [66], quaternary as IGZO [4,30,[71][72][73][74][75][76][77][78][79][80], ITAO [81,82], and ITGO [83] have been introduced. Also, compared to other materials in table, the precursors for indium oxide are variously used.…”

Section: Chemical Reaction and Film Propertiesmentioning

confidence: 99%

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Kim

Kim²,

Kim³

et al. 2023

Int. J. Extrem. Manuf.

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Since the report of amorphous In-Ga-Zn-O (a-IGZO) based thin film transistors (TFTs), interest in oxide semiconductors has increased due to their high mobility, low off-current, low process temperature, and wide flexibility of compositions and processes. However, oxide semiconductors deposited by conventional processes like physical vapor deposition (PVD) leads a problematic issue to produce high-resolution displays and highly integrated memory devices due to the limited process flexibility and the poor conformality on the structured surface. Thus, a need to replace conventional deposition processes has emerged. Atomic layer deposition (ALD) is an advanced technique which could provide conformal, thickness-controlled, and high-quality thin film deposition. From these backgrounds, recently, studies on ALD based oxide semiconductors have dramatically increased. Even so, the relations of film properties of ALD-oxide semiconductors with the main variables associated with deposition and issues related to applications are still less understood than conventional one. In this review, we introduce ALD-oxide semiconductors by providing: (Ⅰ) a brief history and importance of ALD-based oxide semiconductors in the industry, (Ⅱ) a discussion of the value of ALD in oxide semiconductors (in-situ composition control in vertical distribution /vertical structure engineering / chemical reaction and film properties / insulator and interface engineering), and (Ⅲ) an explanation of the challenging issues of scaling oxide semiconductors and ALD in industrial applications. This review provides a valuable perspective for researchers who have interest in semiconductor material and electronic devices by suggesting the reasons why ALD is important in the application of oxide semiconductors.

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Reaction mechanisms of α,ω-bifunctional molecules toward atomic layer deposition versus molecular layer deposition

Kim,

Oh,

Shong

2024

Materials Chemistry and Physics

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Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

Abstract: Controlled aluminum oxide doping at an atomic level into binary indium/tin oxide thin-films allows control of crucial TFT parameters such as the mobility (μsat), the threshold-voltage (Vth) and on/off ratio (IOn/IOff). Moreover, it stabilizes TFT performance under optical stress.

Cited by 4 publications

References 61 publications

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Light Effect on Amorphous Tin Oxide Thin‐Film Transistors

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Reaction mechanisms of α,ω-bifunctional molecules toward atomic layer deposition versus molecular layer deposition

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