Multilayered heterostructures comprising of In2O3, SnO2, and Al2O3 were studied for their application in thin‐film transistors (TFT). The compositional influence of tin oxide on the properties of the thin‐film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post‐deposition annealing at 400 °C the thin‐films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2O3/SnO2/Al2O3 are incorporated into TFT devices, exhibiting a saturation field‐effect mobility (μsat) of 2.0 cm2 ⋅ V−1 s−1, a threshold‐voltage (Vth) of 8.6 V, a high current on/off ratio (IOn/IOff) of 1.0×107, and a subthreshold swing (SS) of 485 mV ⋅ dec−1. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).
Controlled aluminum oxide doping at an atomic level into binary indium/tin oxide thin-films allows control of crucial TFT parameters such as the mobility (μsat), the threshold-voltage (Vth) and on/off ratio (IOn/IOff). Moreover, it stabilizes TFT performance under optical stress.
Gas phase transformation of ZnO on vertically aligned CNTs (VACNTs) into ZIF-8 particles on VACNTs is achieved by direct reaction with 2-methylimidazole. The composite shows attractive gas adsorption properties over a wide pressure regime.
Lesser is better: Multilayered heterostructures comprising of In2O3, SnO2, and one or two atomic layers of Al2O3 were studied for their application in thin‐film transistors (TFT). The cover image centers around the fabrication of a multilayer thin film oxide aggregate which works as semiconductor in a transistor device. It is composed of different layers of SnO2, In2O3 and Al2O3 fabricated using atomic layer deposition (ALD) technique which employs the reaction of suitable organometallic precursors with water, all of which originate from the gas phase from an individual molecular source (left upper side). The rainbow reflects the stability of the material against illumination. The background depicts the universal binary 0/1 code representing the every‐day use of transistors in our modern society. More information can be found in the Full Paper by J. J. Schneider et al. (DOI: 10.1002/chem.202101126).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.