-In this work, we investigate the enhanced performance of amorphous indium zinc oxidesbased thin film transistors with hafnium silicate (HfSiO x ) gate insulators. HfSiO x gate insulators annealed at various conditions are deposited by cosputtering of hafnium oxide and Si. The structural properties of HfSiO x are investigated using the atomic force microscopy, X-ray diffraction, and x-ray photoelectron spectroscopy (XPS). techniques. Furthermore, the electrical characteristics of HfSiO x are analyzed to investigate the effect of annealing conditions. We obtain optimal results for thin film transistors with HfSiO x gate insulators annealed for 1 h at 100°C, with a saturation mobility of 1.2 cm 2 /V · s, threshold voltage of 2.2 V, on current/off current ratio of 2.0 × 10 6 , and an insulator surface roughness of 0.187 nm root mean square.
We investigated the electrical performance of Ti–IZO active‐channel layer thin‐film transistors (TFTs) using a radio frequency (RF) magnetron co‐sputtering system to co‐sputter IZO and Ti targets. The samples were fabricated by changing the RF gun power of the IZO. The other parameters such as the RF gun power of the Ti target, oxygen partial pressure [O2/(Ar + O2)], and initial and process pressure of the chamber were unchanged. Unlike the sample sputtered only with IZO, the thin films of the Ti–IZO samples could control the oxygen vacancy because Ti reacts with the oxygen in the IZO. Therefore, Ti–IZO thin films can suppress the carrier concentration and thus have an effect on the electrical performance of TFTs.
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