Improved performance of 4K SRAM by means of CW laser annealing

A TEM study on defects in pulse and cw laser-annealed Si layers is described. The type and distribution of defects at the beam periphery in pulse laser annealing depend on the pulse duration, whereas dislocation loops are distributed homogeneously in cw laser annealing. The periodic change in the defect density at the periphery was thoroughly investigated with five different laser beams, and it was concluded to be due to laser beam interference. A dislocation network is observed in the melted silicon layer in cw laser annealing at sufficiently high power. Dislocations interact with each other, and result in Cottrell sessile dislocations. The properties of implanted As atoms were also examined by RBS and electrical measurements, and the results for pulse and cw laser annealing are compared.

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CW Laser Annealed Small-Geometry NMOS Transistors

Naem

Boothroyd

Calder

1983

MRS Proc.

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Small geometry NMOS transistors were fabricated using junctions implanted with 1016; Asplus;/cm2; @ 180 keV and annealed through 1067 Å of SiO 2; with a cw argon laser. Phosphosilicate glass densification was the only other high temperature step. Channel lengths were varied from 1.3 to 50 μ. and channel widths from 1 to 50,μ. Physical characterization of these devices revealed a junction depth of 3000 Å with negligible lateral diffusion. The smallest transistor had approximately a square channel with WxL = 1×l.3μ2;. IDS;−VDS; characteristics of this device were similar to those of large geometry devices due to counteracting short and narrow channel effects. The threshold voltage was 0.61±0.013 V across an entire wafer, while there was no punch-through for VDS;<13 V and no avalanche breakdown for VDS; < 14 V. The junctions showed a forward-biased ideality factor of 1.17, and the contact resistance in an 8 × 8 μ2; area was 1.5Ω to the source/drain regions and 0.5Ω to laser-recrystallized polysilicon interconnects. It is concluded that cw laser annealing can be used to fabricate small-geometry devices with excellent performance and without any deleterious effects.

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Improved performance of 4K SRAM by means of CW laser annealing

Cited by 3 publications

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Laser processing of silicon

Laser processing of silicon

Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms

CW Laser Annealed Small-Geometry NMOS Transistors

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