A TEM study on defects in pulse and cw laser-annealed Si layers is described. The type and distribution of defects at the beam periphery in pulse laser annealing depend on the pulse duration, whereas dislocation loops are distributed homogeneously in cw laser annealing. The periodic change in the defect density at the periphery was thoroughly investigated with five different laser beams, and it was concluded to be due to laser beam interference. A dislocation network is observed in the melted silicon layer in cw laser annealing at sufficiently high power. Dislocations interact with each other, and result in Cottrell sessile dislocations.
The properties of implanted As atoms were also examined by RBS and electrical measurements, and the results for pulse and cw laser annealing are compared.