Laser processing of silicon

Boyd, Ian W.; Wilson, J.I.B.

doi:10.1038/303481a0

Cited by 25 publications

(9 citation statements)

References 139 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon is a material of great technological interest and its dominance in the electronics industry is undisputed. This undiminished technological interest has also meant that the response of Si to laser irradiation has been studied thoroughly in the past decades [9][10][11][12][13], turning it arguably into one of the world's best-characterized materials. There are numerous fundamental studies (experimental and theoretical) of LIPSS formation in Si under femtosecond (fs) laser irradiation [14][15][16], investigating the formation mechanism and the influence of laser parameters on the ripple period and orientation.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

et al. 2016

View full text Add to dashboard Cite

Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

show abstract

Section: Introductionmentioning

confidence: 99%

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Ultraviolet (UV) light-emitting devices have diverse applications in scientific research [1,2], medical apparatus [3,4] and commercial products [5]. Hence, the realization of UV light-emitting diodes (LEDs) and lasers [6,7], especially for the use of ZnO semiconductor [8][9][10], has been the focus of the recent extensive investigations.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of ZnO light-emitting devices using filtered cathodic vacuum arc technique

Yuen

Lau

et al. 2006

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Laser beam-induced processing of materials has been utilized for tuning material properties due to the ability to rapidly heat to the melting point and it allows the controlled surface modification of materials123. Laser thermal processing has been used to activate dopants introduced by ion implantation to modify the intrinsic properties of semiconductor materials such as Si and Ge to form ultra-shallow junctions456.…”

mentioning

confidence: 99%

Laser-induced phase separation of silicon carbide

et al. 2016

View full text Add to dashboard Cite

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

show abstract

Laser processing of silicon

Cited by 25 publications

References 139 publications

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

Design and fabrication of ZnO light-emitting devices using filtered cathodic vacuum arc technique

Laser-induced phase separation of silicon carbide

Contact Info

Product

Resources

About