Improved Electrical Characteristics of Amorphous Oxide TFTs Based on $\hbox{TiO}_{x}$ Channel Layer Grown by Low-Temperature MOCVD

Park, Jae-Woo; Han, Sungwon; Jeon, Namho; Jang, Jiin-Yuh; Yoo, Seunghyup

doi:10.1109/led.2008.2005737

Cited by 25 publications

(17 citation statements)

References 9 publications

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“…3 several research groups have recently suggested titanium oxide (TiO x ) as a cost-effective n-type semiconductor. 4,5 Deposition methods such as metal-organic chemical vapor deposition (MOCVD), 6 atomic layer deposition (ALD), 7 spray pyrolysis, 8 and magnetron sputtering 9 were employed to grow TiO x active layers, which were implemented into working TFT devices.…”

mentioning

confidence: 99%

“…In the above studies, titanium oxide was reported to exist in the amorphous state 6,7,9 or in one of its crystalline polymorphs, namely rutile 10 or anatase. 8 It was shown that TiO x exhibits n-type transistor characteristics regardless of the microstructure, and such a behavior is generally attributed to the generation of free electrons originating from an oxygen deficient stoichiometry.…”

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confidence: 99%

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Molecular orbital ordering in titania and the associated semiconducting behavior

Park

Ahn

et al. 2011

Applied Physics Letters

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Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153Studies on the room temperature growth of nanoanatase phase Ti O 2 thin films by pulsed dc magnetron with oxygen as sputter gas Influence of working gas pressure on structure and properties of WO 3 films reactively deposited by rf magnetron sputtering J.

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confidence: 99%

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confidence: 99%

Molecular orbital ordering in titania and the associated semiconducting behavior

Park

Ahn

et al. 2011

Applied Physics Letters

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“…Titanium oxide is a material that is in general known to be an excellent insulator ͑often used as gate dielectric material͒, or a semiconductor that exhibits very low field effect mobility ͑Ͻ1 cm 2 / V s͒ when incorporated into TFTs. [11][12][13][14] Thus, while direct charge injection from the Mo into HIZO is possible, the carriers have to tunnel through the TiO x energy barrier in case of the Ti/Cu device. Consequently, charge injection from the source into the HIZO semiconductor is more limited in the latter, which may account for the higher contact resistance and smaller ⌬L.…”

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confidence: 99%

Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Park

Kim

Son

et al. 2010

Applied Physics Letters

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In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx-passivated Hf–In–Zn–O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

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“…• C. 13,24,25 Whereas, we deposited as prepared TiO 2-x layer at room temperature without any heat treatment.…”

Section: Resultsmentioning

confidence: 99%

“…12 On the other hand, Choi et al reported a high performance TiO 2-x -based FETs even though the TiO 2-x channel layer was still amorphous, which agreed with the work on the TiO 2-x -based FETs fabricated by low-temperature metal-organic chemical vapor deposition (MOCVD). 13,24 Therefore, several mechanisms including crystallinity improvement contribute to the transfer characteristics improvement after heat treatment.…”

Section: Resultsmentioning

confidence: 99%

Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator

2011

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RF magnetron sputtered titanium oxide (TiO2-x) thin films were used as active channel layer to fabricate field-effect transistors (FETs). In the as-prepared FETs, poor FET performance was found, with a low on-to-off current ratio of ∼500 and a high sub-threshold slope. It is attributed the existence of Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface, which was probed by X-ray Photoelectron Spectroscopy (XPS) measurement. A remark improvement of sub-threshold slope and on-to-off current ratio was observed due to post annealing in vacuum at 300 °C for 30min. By using the electron energy loss spectroscope (EELS) analysis, oxidization of TiO2-x layer closing to SiO2 layer region was found, suggesting that Si-O-Ti cross-linking bonding at TiO2-x/SiO2 interface breaks due to post annealing treatment.

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Improved Electrical Characteristics of Amorphous Oxide TFTs Based on $\hbox{TiO}_{x}$ Channel Layer Grown by Low-Temperature MOCVD

Cited by 25 publications

References 9 publications

Molecular orbital ordering in titania and the associated semiconducting behavior

Molecular orbital ordering in titania and the associated semiconducting behavior

Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator

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