Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Lee, Eunha; Jung, Ji Sim; Lee, Kwang Hee; Maeng, W. J.; Kim, Hyun Suk; Kim, Eok Su; Park, Kyung Bae; Kwon, Jang Yeon; Ryu, Myung Kwan; Lee, Sang Yoon

doi:10.1063/1.3505151

Cited by 27 publications

(14 citation statements)

References 14 publications

(10 reference statements)

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“…In the saturation region, a mobility value of 5.68 cm 2 /Vs and V th value of -1.62 V were observed at a V ds value of 10.1 V. The subthreshold swing was estimated to be 180 mV/decade. These values are comparable to those of previously reported oxide TFTs, as well as IGZO TFTs, even with a short channel length [2,6,12]. Also, in contrast to the results reported for short-channel (5 μm) ZnO TFTs, no shift of the transfer curves or degradation of the subthreshold swing were observed upon increasing the source-drain voltage [8].…”

Section: Resultssupporting

confidence: 82%

“…However, the maximum field-effect mobility of the a-IGZO TFTs decreased from 9.4 to 7.0 cm 2 /V s as the channel length decreased from 20 to 6 μm. This mobility reduction may indicate the existence of patristic resistance such as source/drain contact resistance due to non-Ohmic contact or Schottky barrier formation due to the TiO x interlayer [12,15]. Figure 3(b) shows the I d /W value as a function of the inverse of the gate length.…”

Section: Resultsmentioning

confidence: 96%

“…In addition, given that Pt film does not adhere well to oxides, an adhesion layer commonly of titanium (Ti) is grown prior to the deposition of the Pt film. The Ti adhesion layer is used for LCD panel in industry, used in conjunction with Ti/Cu electrode [12,13]. The interface between the Ti adhesion layer and the underlying IGZO shows the presence of an amorphous TiO x layer with a thickness of about 3 nm.…”

Section: Methodsmentioning

confidence: 99%

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Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

Park¹

2012

J Electroceram

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The characteristics of amorphous In-Ga-Zn-O (IGZO) thin film transistors (TFTs) and load inverters with a short channel length were studied. The IGZO TFTs showed a mobility value of>5 cm 2 /Vs with a V th value of -1.62 V. No degradation of the TFT properties, such as a negative shift of V th or degradation of the subthreshold slope by the short-channel effect, were observed down to a channel length of 2 μm. A load inverter using an IGZO TFT with a gate length of 2 μm and resistor of 1 MΩ was fabricated and characterized, and a voltage gain of 4 was obtained at a V DD value of 10 V. Additionally, the action of a dynamic inverter operating at frequencies of 1 and 10 kHz was characterized. Complete inverter action was obtained at 1 kHz, while an delay time of 0.53 μs was observed at 10 kHz. These promising results indicate that short channel IGZO TFTs are candidate for TFTs in the display industry, including active-matrix organic light-emitting diodes or multi-view three-dimension TV.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 96%

Section: Methodsmentioning

confidence: 99%

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Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

Park¹

2012

J Electroceram

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“…Several methods are proposed to resolve this problem, by introducing an extra layer at the interface as a diffusion barrier and adhesion layer, such as Cu/Ti [8,9], Cu/Ta [10], Cu/Mn [11], or Cu/Mo [12,13]. However, the extra functional layer gives rise to a complex pattern process.…”

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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Abstract:The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 • C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 µΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu 2 O appeared when the annealing temperature reached above 350 • C, which accounts for the increase of the resistivity. Based on Al 2 O 3 and SiO 2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT).

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“…4,5 A Ti (or Mo) thin film serves as diffusion barrier/adhesion layers, providing low contact resistance and improved adhesion of Cu to both Si and glass substrates. However, the formation of bilayered structures requires two different targets, thus making the process more complex, as well as increasing cost.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

Lee

Nam

et al. 2011

Journal of Elec Materi

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A Cu alloy/Cu alloy oxide bilayer structure was formed on an n + -a-Si:H substrate using a single Cu alloy target. It was employed for the source/drain electrodes in the fabrication of a-Si:H thin-film transistors with good electrical performance, high thermal stability, and good adhesion. Transmission electron microscopy and electron energy-loss spectroscopy analyses revealed that the initial sputtering of the Cu alloy in O 2 /Ar allowed for preferential oxidation of Si and the formation of a SiO x /Cu-supersaturated a-Si:H bilayer at the copper oxide-a-Si:H interface. This bilayer turned into an SiO x /Cu 3 Si bilayer after annealing at 300°C. It provided a stable contact structure with low contact resistance.

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Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance

Cited by 27 publications

References 14 publications

Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Fabrication of Source/Drain Electrodes for a-Si:H Thin-Film Transistors Using a Single Cu Alloy Target

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