In this work, we demonstrate highly scaled, non-volatile memory transistors with ferroelectric Zr-doped HfO 2 (HZO) as gate insulator.-gate transistors with gate length ∼30 nm and width ∼85 nm were fabricated on ∼20 nm thick SOI. We demonstrate robust memory operation with ≤100 ns program and erase speed at ±5 V, projected memory retention time up to 10 years at 85 • C, and ∼0.5 V memory window after 10 8 endurance cycles. The impact of V D on erase speed provides insights into the importance of holes on memory operation.
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