We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.
High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a Zn metal target in a plasma mixture of Ar, N2, and O2 gas. The RF power and the O2 to N2 gas flow rates were systematically adjusted to prepare a set of ZnON films with different relative anion contents. The carrier density was found to be greatly affected by the anion composition, while the electron mobility is determined by a fairly complex mechanism. First-principles calculations indicate that excess vacant nitrogen sites (VN) in N-rich ZnON disrupt the local electron conduction paths, which may be restored by having oxygen anions inserted therein. The latter are anticipated to enhance the electron mobility, and the exact process parameters that induce such a phenomenon can only be found experimentally. Contour plots of the Hall mobility and carrier density with respect to the RF power and O2 to N2 gas flow rate ratio indicate the existence of an optimum region where maximum electron mobility is obtained. Using ZnON films grown under the optimum conditions, the fabrication of high-performance devices with field-effect mobility values exceeding 120 cm2/Vs is demonstrated based on simple reactive RF sputtering methods.
Amorphous metal oxides are attractive materials for various sensor applications, because of high electrical performance and easy processing. However, low absorption coefficient, slow photoresponse, and persistent photoconductivity of amorphous metal oxide films from the origin of deep-level defects are obstacles to their use as photonic applications. Here, we demonstrate ultrahigh photoresponsivity of organic-inorganic hybrid phototransistors featuring bulk heterojunction polymers and low-bandgap zinc oxynitride. Spontaneous formation of ultrathin zinc oxide on the surface of zinc oxynitride films could make an effective band-alignment for electron transfer from the dissociation of excitons in the bulk heterojunction, while holes were blocked by the deep highest occupied molecular orbital level of zinc oxide. These hybrid structure-based phototransistors are ultrasensitive to broad-bandwidth photons in ultraviolet to near-infrared regions. The detectivity and a linear dynamic range exceeded 10(12) Jones and 122.3 dB, respectively.
Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153Studies on the room temperature growth of nanoanatase phase Ti O 2 thin films by pulsed dc magnetron with oxygen as sputter gas Influence of working gas pressure on structure and properties of WO 3 films reactively deposited by rf magnetron sputtering J.
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