Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures

Jeong, Hyun‐Jun; Ok, Kyung‐Chul; Park, Jozeph; Lim, Ji Yeon; Cho, Johann; Park, Jin‐Seong

doi:10.1109/led.2015.2478956

Cited by 49 publications

(42 citation statements)

References 13 publications

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“…Diffraction peak of SnO2 is never found, which is consistent with the result that Sn can be solved in In2O3 [9]. It has also been reported that crystallized IGTO film is indicative of an increase in oxygen vacancy related defects, which could release excess free electrons during negative bias stress conditions, resulting in more negative threshold voltage shifts [10].…”

Section: Crystallinity Of Igto Filmsupporting

confidence: 86%

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

Seo

et al. 2021

Symp Digest of Tech Papers

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Self‐aligned coplanar structure and back channel etched (BCE) structure have been developed using InGaSnO (IGTO) active layer. The mobility of IGTO TFT is around 25 cm2V−1s−1 for both TFT structures. The 31 inch 4K2K (144ppi) top emission IJP AMOLED driven by self‐aligned coplanar IGTO TFTs and 10.7 inch 120 × 120 (× RGB) mini‐LED display driven by BCE IGTO TFTs are fabricated to verify IGTO TFT's characteristics. High mobility IGTO TFTs have been developed for future applications such as high resolution and narrow bezel OLED displays and micro‐LED displays.

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Section: Crystallinity Of Igto Filmsupporting

confidence: 86%

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

Seo

et al. 2021

Symp Digest of Tech Papers

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“…On the other hand, In-Yb-O devices showed negative V th shifts induced by NBS. The negative V th shift is generally ascribed to the release of electrons from donor-like traps related with O V [ 28 ]. Hence the NBS stability is also improved with the addition of Yb.…”

Section: Resultsmentioning

confidence: 99%

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Hong

et al. 2022

Nanomaterials

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We demonstrate the growth of ultra-thin (~5 nm) indium ytterbium oxide (In-Yb-O) thin film using a simple vacuum-free aqueous solution approach for the first time. The influences of Yb addition on the microstructural, chemical, optical, and electrical properties of In2O3 are well investigated. The analyses indicate that Yb dopant could suppress oxygen vacancy defects effectively owing to the lower standard electrode potential, lower electronegativity, and stronger metal-oxide bond strength than that of In. The optimized In-Yb-O thin-film transistors (TFTs) exhibit excellent electrical performance (mobility of 8 cm2/Vs and on/off ratio of ~108) and enhanced stability. The triumph of In-Yb-O TFTs is owing to the high quality In2O3 matrix, the remarkable suppressor of Yb, and the nanometer-thin and atomically smooth nature (RMS: ~0.26 nm) of channel layer. Therefore, the eco-friendly water-induced ultra-thin In-Yb-O channel provides an excellent opportunity for future large-scale and cost-effective electronic applications.

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“…Low temperature processing is exceedingly important for flexible display applications because most plastic substrates have low glass transition temperatures (below 200 • C) [15,16]. In IGTO, the cation Sn is used instead of Zn, because a similar electronic configuration of Sn 4+ and In 3+ can increase the electron mobility within the AOS by facilitating percolation path formation [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

et al. 2020

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We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (tAls) of 3, 5, and 8 nm were deposited, respectively, on top of the IGTO thin film by electron beam evaporation, and the IGTO TFTs without and with Al capping layers were subjected to thermal annealing at 200 °C for 1 h in ambient air. Among the IGTO TFTs without and with Al capping layers, the TFT with a 3 nm thick Al capping layer exhibited excellent electrical performance (field-effect mobility: 26.4 cm2/V s, subthreshold swing: 0.20 V/dec, and threshold voltage: −1.7 V) and higher electrical stability under positive and negative bias illumination stresses than other TFTs. To elucidate the physical mechanism responsible for the observed phenomenon, we compared the O1s spectra of the IGTO thin films without and with Al capping layers using X-ray photoelectron spectroscopy analyses. From the characterization results, it was observed that the weakly bonded oxygen-related components decreased from 25.0 to 10.0%, whereas the oxygen-deficient portion was maintained at 24.4% after the formation of the 3 nm thick Al capping layer. In contrast, a significant increase in the oxygen-deficient portion was observed after the formation of the Al capping layers having tAl values greater than 3 nm. These results imply that the thicker Al capping layer has a stronger gathering power for the oxygen species, and that 3 nm is the optimum thickness of the Al capping layer, which can selectively remove the weakly bonded oxygen species acting as subgap tail states within the IGTO. The results of this study thus demonstrate that the formation of an Al capping layer with the optimal thickness is a practical and useful method to enhance the electrical performance and stability of high-mobility IGTO TFTs.

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Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures

Cited by 49 publications

References 13 publications

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

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