1.1: Invited Paper: High Mobility Self‐Aligned Coplanar and BCE IGTO Semiconductor TFTs for Future Applications

Abstract

Self‐aligned coplanar structure and back channel etched (BCE) structure have been developed using InGaSnO (IGTO) active layer. The mobility of IGTO TFT is around 25 cm2V−1s−1 for both TFT structures. The 31 inch 4K2K (144ppi) top emission IJP AMOLED driven by self‐aligned coplanar IGTO TFTs and 10.7 inch 120 × 120 (× RGB) mini‐LED display driven by BCE IGTO TFTs are fabricated to verify IGTO TFT's characteristics. High mobility IGTO TFTs have been developed for future applications such as high resolution and narrow bezel OLED displays and micro‐LED displays.

P‐1.2: Improvement of Mobility and Reliability of a‐IGZO TFTs by Dual‐Gate Driving

“…Amorphous oxide semiconductors (AOSs) thin-film transistors (TFTs), which is represented by an amorphous indium gallium zinc oxide [1-3] (a-IGZO), have become a promising drive backplane technology for the mini-LED and micro-LED equipped with much higher current and brightness without sacrificing lifetime, due to their high mobility, extremely low leakage current, good uniformity and electrical stability. An ever-increasing demand [4] on the carrier mobility and reliability has pushed the research efforts toward the alternative semiconducting multicomponent materials [5][6] (i.e. IGTO and IGZTO) and device structure.…”

2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display

“…On the other hand, an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have become a standard backplane technology for the mini-LED and micro-LED equipped with much higher current and brightness without sacrificing lifetime, due to their high mobility, extremely low leakage current, good uniformity and electrical stability [3][4]. An ever-increasing demand on the carrier mobility has pushed the research efforts toward the alternative semiconducting multi-component materials such as indium gallium tin oxide (IGTO) [5] and indium gallium zinc tin oxide (IGZTO) [6]. In particular, IGTO TFTs has been identified to have a respectable high mobility, which was attributed to the synergic intercalation of In 3+ and Sn 4+ 5s orbital cations, leading to the lower effective electron mass and enhanced mobility in the resulting field-effect transistors.…”