Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO₂-Based Thin Film Transistors

Abstract

Thin film transistors (TFTs) with anatase-TiO2 channel material deposited on an SiO2/Si substrate by atomic layer deposition are fabricated to investigate the effect of the source/drain (S/D) metal work function on the electrical characteristics of the TFTs. S/D materials such as aluminum, silver, and gold are selected for this study. From the measured current-voltage characteristic curves in the dark and at room temperature, it is demonstrated that the anatase TiO2-based TFT with Ag S/D material shows the highest on/off-current ratio (∼ 105), field effect mobility in the saturation regime (μsat = 5.17 cm2V−1s−1), and saturation current (IDS,sat ∼ 0.47 mA).

Self-Seeding Growth for Perovskite Solar Cells with Enhanced Stability

“…So, the work function of pristine TiO 2 is $4.3-4.4 eV, which is consistent with a previous report. 31 In contrast, the work function of the washed SSG2 sample is $4.6-4.7 eV. The increase of work function indicates that some perovskite is left over on the TiO 2 surface (however, the AFM topography does not change), which we hypothesize provides seeds for subsequent perovskite crystallization-and hence we call this process self-seeding.…”

Interface Asymmetry Induced by Symmetric Electrodes on Metal–Al:TiO$_{x}$–Metal Structures

“…This common electrode will be then TE for the lower part and the BE for the upper part of the structure and therefore has to be accordingly selected. Additionally, for applications beyond the memories, it is worth also mentioning the metal contacts at the source and the drain terminals of MO based Thin Film Transistors (TFTs), very recently reported to affect the device performance [33]. In the case of TFTs, the metal contacts could also be at the top or at the bottom of the active area (MO film) depending on the device structure (top or bottom gate) and on the preferred configuration (staggered or coplanar).…”

Electric Field-Driven Catalytic Activity Using a Bioinspired Peptide and Titanium Dioxide Semiconductor Composite with Metal Nanoparticles

“…We have previously determined the work function of PNTs to be ∼6.2 eV using Kelvin probe force microscopy . The reported electron affinity (conduction band minimum) value of diphenylalanine PNTs is ∼4.4 eV. , TiO 2 is a well-known wide bandgap (3.2 eV) semiconductor with its conduction band minimum located 4.0 eV below the vacuum level . The reported value of the work function of TiO 2 varies by up to 1 eV depending on the crystal orientation, with values between 4.2 to 4.9 eV reported. , Here, a value of 4.4 eV was assumed.…”

“…The reported electron affinity (conduction band minimum) value of diphenylalanine PNTs is ∼4.4 eV. , TiO 2 is a well-known wide bandgap (3.2 eV) semiconductor with its conduction band minimum located 4.0 eV below the vacuum level . The reported value of the work function of TiO 2 varies by up to 1 eV depending on the crystal orientation, with values between 4.2 to 4.9 eV reported. , Here, a value of 4.4 eV was assumed. The work function of Ag ( E FAg = 4.26 eV) is lower than that of TiO 2 , which results in the formation of an Ohmic contact between the two materials (Figure ).…”