Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

Gonzalez, J. O.; Alatise, Olayiwola

doi:10.1109/tpel.2020.3012298

Cited by 27 publications

(9 citation statements)

References 48 publications

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“…In [33], it has shown that the crosstalk shoot-through current could be used as a parameter to characterize devices subject to Bias Temperature Instability (BTI). The experiment is also performed to reveal the impact of BTI on three selected DUTs with the testing circuit and experiment procedure described in Fig.…”

Section: F Impact Of Bti On Shoot-through Currentmentioning

confidence: 99%

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Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Yang

Jahdi

Stark

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact of temperature, drain-source voltage switching rate, gate resistance and load current level on crosstalk-induced properties of different SiC MOSFET structures. It shows that due to the smaller gate-source capacitance, the two double-trench MOSFETs exhibit higher induced gate voltage during crosstalk with the same external gate resistance, which together with the higher transconductance, yield higher shoot-through current than the planar MOSFET. Accordingly, their shoot-through current decreases with increasing of the load current while the planar MOSFET exhibits an opposite trend. The different trend of shoot-through current with temperature on DUTs reveals that the crosstalk in different device structures are dominated by different mechanisms, i.e. threshold voltage and channel mobility with the gate-source capacitance influencing the amplitude. Impact of bias temperature instability with positive and negative gate stressing is measured with a range of stress and recover periods at temperateness ranging between 25°C to 175°C. These measurements show that the peak shoot-through correlates with the threshold drift, though with less sensitivity for SiC symmetrical and asymmetrical double-trench MOSFETs compared with the planar SiC MOSFET where the inter-dependence is pronounced. A model is developed for the induced gate voltage and shoot-through current during crosstalk with channel current considered. The comparison of the model results with measurement confirms its capability to predict crosstalk in different MOSFET structures.

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Section: F Impact Of Bti On Shoot-through Currentmentioning

confidence: 99%

“…The combination of top and bot gate resistance (R G_T op and R G_Bot ) are 47 Ω and 330 Ω, respectively. It is necessary to intentionally have large R G_Bot or the impact of BTI may not be revealed [33]. In this experiment, the DUT at bottom is stressed before the turn-ON of top device to initiate crosstalk.…”

Section: F Impact Of Bti On Shoot-through Currentmentioning

confidence: 99%

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Yang

Jahdi

Stark

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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“…However, there are few literatures on crosstalk issue under resistive load. In [20] and [24], only the crosstalk experiments were carried out with resistive load. Therefore, it is necessary to establish an analytical model of crosstalk voltage under resistive load, and then quantitatively analyze the influence of various parameters on the crosstalk voltage under resistive and inductive load to ensure the reliable operation of devices.…”

Section: Introductionmentioning

confidence: 99%

Analytical models of the crosstalk voltage in SiC MOSFETs under different loads

Cai

Sun

et al. 2023

IET Power Electronics

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Due to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method based on energy conservation is proposed, and an analytical model of the crosstalk voltage under resistive load is established. Moreover, an analytical model of the crosstalk voltage under inductive load with only device and circuit parameters is introduced. Furthermore, the influence of the drive resistance and the common source inductance on the crosstalk voltage under different loads is evaluated through the analytical model. Finally, a double pulse test is carried out to verify the validity of the analysis. The results presented here can provide guidance for the design of gate circuit parameters to regulate the crosstalk issue of SiC MOSFETs under different loads.

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“…This was defined as a maximum of 24 hours for silicon devices but has been redefined as 96 hours for SiC MOSFETs [8] and largely remains unclear for GaN e-HEMTs. VTH shift from VGS stress has been studied extensively in SiC MOSFETs [9][10][11] and is increasingly being studied in GaN e-HEMTs [12,13].…”

Section: Introductionmentioning

confidence: 99%

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

Deb

Gonzalez

Bashar

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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This paper investigates the peculiarities and challenges of accurate threshold voltage (VTH) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typically comprising preconditioning, VTH measurement, gate voltage stress and VTH measurement after stress. However, with Wide bandgap (WBG) devices like SiC and GaN transistors, the repeatability of VTH measurement, the impact of VTH measurement duration, delay between successive measurements and the role of preconditioning on the accuracy of VTH are currently under study. With current industrial and academic research interest in bias temperature instability in WBG devices, this paper provides significant insight into how repeatable VTH measurement is in WBG devices since measuring VTH can change it. The impact of repeated measurements on the cumulative VTH shift is investigated in both WBG technologies with different delay times between successive measurements with and without preconditioning. Unipolar and Bipolar preconditioning pulses are compared regarding VTH measurement in SiC MOSFETs.

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Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

Abstract: Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 27 publications

References 48 publications

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Analytical models of the crosstalk voltage in SiC MOSFETs under different loads

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

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