2023
DOI: 10.1049/pel2.12554
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Analytical models of the crosstalk voltage in SiC MOSFETs under different loads

Abstract: Due to the higher switching speed and lower threshold voltage of SiC MOSFET, its crosstalk issue is more serious than that of Si devices. Firstly, the mechanism and process of crosstalk under resistive load and inductive load are compared and analyzed. Then, a parameter decoupling method based on energy conservation is proposed, and an analytical model of the crosstalk voltage under resistive load is established. Moreover, an analytical model of the crosstalk voltage under inductive load with only device and c… Show more

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“…The monitoring system observes the inverter indirectly through the controlled electric machine. In literature, a key aging indicator for power devices at high switching frequencies is the variation in R ds (on) , causing a noticeable reduction in current (I d (on) ) compared to its intrinsic behavior, often characterized by temperature-dependent traits [77][78][79][80][81]. In the realistic model, the output current of the machine Park model is adjusted by a scaling factor tied to the aging parameter.…”
Section: Sic Mosfet Ageing Modelingmentioning
confidence: 99%
“…The monitoring system observes the inverter indirectly through the controlled electric machine. In literature, a key aging indicator for power devices at high switching frequencies is the variation in R ds (on) , causing a noticeable reduction in current (I d (on) ) compared to its intrinsic behavior, often characterized by temperature-dependent traits [77][78][79][80][81]. In the realistic model, the output current of the machine Park model is adjusted by a scaling factor tied to the aging parameter.…”
Section: Sic Mosfet Ageing Modelingmentioning
confidence: 99%