Image Processing by a Programmable Grid Comprising Quantum Dots and Memristors

Yilmaz, Yalcin; Mazumder, Pinaki

doi:10.1109/tnano.2013.2263153

Cited by 14 publications

(9 citation statements)

References 19 publications

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“…From (15), it can be observed that the linear time-variant part of the memristance expression becomes negligible with the increment in frequency. So, a memristor can be considered as a linear resistor independent of time.…”

Section: Frequency Response Analysismentioning

confidence: 99%

“…The memristive systems and generalised mathematical model have been discussed in [5,6]. Owing to its unique properties, such as nonlinear, nonvolatility, high-data storage, low power and endurance, it is suitable for many applications such as oscillator design [7][8][9], Chua's oscillator circuits [10,11], neuromorphic networks [12][13][14], image processing [15], analogue and digital programmable circuits [16,17]. Its compatibility with conventional complementary metal oxide semiconductor (CMOS) technology has attracted the attention of many researchers to further explore its application.…”

Section: Introductionmentioning

confidence: 99%

“…Nanoscale memristors have high-fabrication cost and technical difficulties in production, however, memristor emulators are simple to design and their properties can be controlled. Several simple simulation program with integrated circuit emphasis models/ emulators [18][19][20][21] have been proposed to mimic the behaviour of the memristor but they are only for simulation purpose and several memristor emulator circuits have been proposed for the real-world application [11][12][13][14][15][16][17]. The circuits presented in [9,[22][23][24][25][26][27] are floating-type memristors having various active elements such as second generation current conveyor (CCII) [9,22], operational amplifier (Op-amp) [23], multiplier and Op-amp [24], operational transconductance amplifier (OTA) in [25], all the above proposed design consists of more number of active and passive components.…”

Section: Introductionmentioning

confidence: 99%

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High‐frequency floating memristor emulator and its experimental results

Ranjan

Surendra

Roushan

et al. 2019

IET Circuits, Devices & Systems

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In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.

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Section: Frequency Response Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High‐frequency floating memristor emulator and its experimental results

Ranjan

Surendra

Roushan

et al. 2019

IET Circuits, Devices & Systems

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“…Based on the aforementioned mechanism, a double layer structured AlAs/GaAs/AlAs RTD containing special doping design of the spacer layers in the source and drain regions was found to exhibit a bow-tie I-V curve [21,22], indicating a sine qua non of a memristor. However, no further achievements have been made in this field until 2012 when a programmable quantum-dots memristor based on an analog cellular neural network (CNN) architecture was developed for image processing applications such as edge and line detections [54,55].…”

Section: Manganite Memristormentioning

confidence: 99%

Overview of emerging memristor families from resistive memristor to spintronic memristor

Wang

Yang

Wen

et al. 2015

J Mater Sci: Mater Electron

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Memristor is a fundamental circuit element in addition to resistor, capacitor, and inductor. As it can remember its resistance state even encountering a power off, memristor has recently received widespread applications from non-volatile memory to neural networks. The current memristor family mainly comprises resistive memristor, polymeric memristor, ferroelectric memristor, manganite memristor, resonant-tunneling diode memristor, and spintronic memristor in terms of the materials the device is made of. In order to help researcher better understand the physical principles of the memristor, and thus to provide a promising prospect for memristor devices, this paper presents an overview of memristor materials properties, switching mechanisms, and potential applications. The performance comparison among different memristor members is also given.

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“…Todo ello ha generado grandes expectativas en relación a la implementación hardware de redes neuronales basadas en memristores, lo que ha dado lugar a una creciente actividad investigadora en torno a este tipo de redes en losúltimos años. Existen ya implementaciones hardware de retículos (grids) de memristores a escala nanométrica y de muy bajo consumo [72,143], aptos para la implementación de redes neuronales memristivas, y se prevé una intensa actividad de investigación y desarrollo en esteámbito en el futuro próximo.…”

Section: Memristores Y Sistemas Memristivosunclassified

Caracterización de circuitos no lineales : análisis de modelos algebraico-diferenciales mediante la teoría de grafos

Chamorro¹

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Tribunal nombrado por el Mgfco. y Excmo. Sr. Rector de la Universidad Politécnica de Madrid, el día Presidente: Vocal: Vocal: Vocal: Secretario: Realizado el acto de defensa y lectura de la Tesis el día en Madrid. Calificación 1 : Fdo.: EL PRESIDENTE LOS VOCALES EL SECRETARIO AGRADECIMIENTOSEste trabajo no hubiera sido posible sin el apoyo permanente de mi director de tesis, Ricardo Riaza. Su motivación y sus enseñanzas me han acompañado desde mucho antes de comenzar este proyecto. Por todo ello quisiera expresarle mi gratitud.Quiero darles las gracias a mis padres por todos los esfuerzos y recursos que han destinado a mi formación durante tantos años. Me gustaría también destacar la ayuda y las enseñanzas que me han proporcionado mis abuelos.La investigación que ha conducido a los resultados que se recogen en esta Tesis Doctoral ha sido parcialmente financiada por los Proyectos de Investigación MTM2010-15102 y MTM2015-67396-P del Plan Estatal de I+D+i del Ministerio de Economía y Competitividad, en los que se enmarcan las líneas de investigación aquí abordadas, y por el Departamento de Matemática Aplicada a las Tecnologías de la Información y las Comunicaciones de la ETSI Telecomunicación (Universidad Politécnica de Madrid).regularidad de un determinado tipo de matrices (matrices mixtas), ampliando ciertos resultados previos de Maxwell y Kirchhoff a través de un teorema de interés independiente.Laúltima parte del trabajo se centra en la caracterización de la bifurcación silla-nodo en circuitos no lineales, mediante la adaptación del teorema clásico que describe esta bifurcación (demostrado por J. Sotomayor en 1973) al contexto algebraico-diferencial para, en una segunda fase, caracterizar las configuraciones circuitales que dan lugar a este fenómeno.A lo largo de toda la Tesis tendrá un papel esencial el memristor. Se trata del que puede entenderse como cuarto elemento circuital fundamental junto a resistencias, bobinas y condensadores, cuya existencia se postuló en 1971 y que ha sido objeto de intensa investigación en laúltima década. Todos los resultados analíticos obtenidos en el curso de la investigación se extenderán al contexto de los circuitos memristivos. ABSTRACTThis Doctoral Thesis addresses the study of certain properties of differential-algebraic equations arising in nonlinear electrical and electronic circuit modelling. According to the so-called structural approach to nonlinear circuit theory, we aim at a systematic characterization of different analytical properties of such circuits in terms of the topology of the underlying digraph and the electrical features of the devices.

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Image Processing by a Programmable Grid Comprising Quantum Dots and Memristors

Cited by 14 publications

References 19 publications

High‐frequency floating memristor emulator and its experimental results

High‐frequency floating memristor emulator and its experimental results

Overview of emerging memristor families from resistive memristor to spintronic memristor

Caracterización de circuitos no lineales : análisis de modelos algebraico-diferenciales mediante la teoría de grafos

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