or X.C.M. (xcma@iphy.ac.cn).Searching for superconducting materials with high transition temperature (T C ) is one of the most exciting and challenging fields in physics and materials science.Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with T C above 77 K, the liquid nitrogen boiling point 1,2 . Here we report an interface engineering method for dramatically raising the T C of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO 3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising T C , but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

Topological insulators (TIs) are quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The most challenging problem faced by current investigations of these materials is the existence of signifi cant bulk conduction. Here we show how the band structure of topological insulators can be engineered by molecular beam epitaxy growth of (Bi 1 − x Sb x ) 2 Te 3 ternary compounds. The topological surface states are shown to exist over the entire composition range of (Bi 1 − x Sb x ) 2 Te 3 , indicating the robustness of bulk Z 2 topology. Most remarkably, the band engineering leads to ideal TIs with truly insulating bulk and tunable surface states across the Dirac point that behave like one-quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on wellestablished semiconductor technology.

As an emerging nitrogen-rich 2D carbon material, graphitic carbon nitride (CN) has drawn much attention for applications ranging from photo-/electrocatalysts to biosensors. Interfacial modification of CN is fundamentally vital but is still in its infancy and remains challenging due to the low reactivity of CN. Here we report that, in conjunction with a π-π stacking interaction, bulk CN could be simultaneously exfoliated via facile mechanical grinding. The obtained CN nanosheets (m-CNNS) not only retained the pristine optoelectronic properties of bulk CN but also enriched a friendly interface for further coupling biomolecules with advanced properties, overcoming the deficiencies of CN in surface science. The m-CNNS were further covalently linked to a DNA probe, and the resultant electrochemiluminescent biosensor for the target DNA exhibited much enhanced sensitivity with respect to that obtained by direct physical absorption of the DNA probe on unmodified CNNS. This noncovalent exfoliation and interfacial modification should greatly expand the scope of potential applications of CN in areas such as biosensing and should also be applicable to other 2D materials in interface modulation.

Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N‐ to p‐type conversion results from the change in the concentrations of TeBi donors and BiTe acceptors. This represents a step toward controlling topological surface states, with potential applications in devices.

The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb 2 Te 3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb 2 Te 3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb 2 Te 3 films down to five quintuple layers (QLs).