Overview of emerging memristor families from resistive memristor to spintronic memristor

Wang, Lei; Yang, Cihui; Wen, Jing; Gai, Shan; Peng, Yuan-Xiu

doi:10.1007/s10854-015-2848-z

Cited by 71 publications

(40 citation statements)

References 63 publications

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“…In a previous study, Hueso et al have successfully integrated spin‐valve effect and electrical nonvolatile memory to form a novel multifunctional spintronic device, which shows a structure of La 0.7 Sr 0.3 MnO 3 (LSMO)/tris(8‐hydroxyquinolinato) aluminum (Alq 3 )/Al 2 O 3 /Co . As displayed in Figure b, the device shows nice performance as electric memory, indicated by both the wide voltage irreversible region and the sharp conductance state transition at a particular voltage on the asymmetric I – V curve, which might attribute to the formation and break of conductive filaments in molecular layer at particular applied biases . However, the multifunctional storage property of this device is seriously limited by the relatively weak spin‐valve effect, since a magnetoresistance (MR) of merely 2% has been observed at very low temperature (LT) of 100 K. Therefore, considerable MR value obtained at room temperature (RT) is a requirement as well as a big challenge to build a preferable multifunctional memory.…”

Section: Parallel‐type Functional Molecular Spintronic Devicesmentioning

confidence: 99%

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

et al. 2019

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a new discipline. According to many outstanding contributions, [5][6][7][8][9] it has already been proven to be a very important and prospective route to promote the progress in this emerging field by making use of the special merits of molecular semiconductors and spinterface, including mechanically flexibility, [10] abundant photoelectric properties, [11] ferroelectric characteristics, [12] as well as magnetic exchange interaction at the interface. [13] Nowadays, multifunction molecular spintronic devices have gradually attracted attention from various research fields. For instance, spin organic lightemitting diode [11] and molecular spin photovoltaic device, [14] which show brand-new device functions, completely distinguished with the common spintronic device, have been first achieved recently by simply integrating the optical-electrical properties of molecules with spin valve, a prototypical spintronic device. Under the rewarding background of the thriving research on molecular semiconductors and fundamental of spintronic devices in the past decades, the study of multifunctional spintronic devices not only conforms to the development trend but also provides a new opportunity for innovative research in both molecular science and spintronics.Molecular spin valve (MSV), a spintronic device, whereby a molecular semiconductor layer is sandwiched between two ferromagnetic (FM) electrodes (Figure 1a), [8,[15][16][17][18] is considered to be the ideal bed for exploiting multifunctional applications. Herein, recent advances of multifunctional molecular spintronic devices, mostly based on MSV configuration, are systematically reviewed. First, recent studies regarding paralleland interactive-type functional molecular spintronic devices are summarized and classified according to the relationship between the working mechanisms. Subsequently, the latest studies on pure-spin-current-type molecular spintronic devices are discussed. Finally, a short summary and future prospects regarding this field are proposed. Parallel-Type Functional Molecular Spintronic DevicesWhen functional molecular semiconductor or spinterfacial engineering is employed in MSV, novel device functions can be created due to molecular properties or introduced spinterfacial effect. If the novel functions as well as the magnetic The field of spintronics has triggered an enormous revolution in information storage since the first observation of giant magnetoresistance (GMR). Molecular semiconductors are characterized by having very long spin relaxation times up to milliseconds, and are thus widely considered to hold immense potential for spintronic applications. Along with the development of molecular spintronics, it is clear that the study of multipurpose spintronic devices has gradually grown into a new research and development direction. The abundant photoelectric properties of molecular semiconductors and the intriguing functionality of the spinterface, together with novel designs of device structures, have promoted the integration of multiple functions a...

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Section: Parallel‐type Functional Molecular Spintronic Devicesmentioning

confidence: 99%

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

et al. 2019

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“…It consists of a switching layer between the first electrode and bottom electrode as shown in Figure . Since it has enormous scientific and commercial potential in the information and computing technologies, especially neuromorphic computing, many types of memristors have been developed and the mechanism, materials, and switching phenomena have been reviewed . Basically, memristors can be loosely grouped into three categories: ionic memristors, spin‐based memristors, and phase‐change memristors (PCM), and each one of them can be further classified according to the mechanism, materials system, and switching phenomena.…”

Section: Synaptic Memristormentioning

confidence: 99%

Neuromorphic Computing with Memristor Crossbar

Zhang

Huang

et al. 2018

Physica Status Solidi (a)

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Neural networks, one of the key artificial intelligence technologies today, have the computational power and learning ability similar to the brain. However, implementation of neural networks based on the CMOS von Neumann computing systems suffers from the communication bottleneck restricted by the bus bandwidth and memory wall resulting from CMOS downscaling. Consequently, applications based on large-scale neural networks are energy/ area hungry and neuromorphic computing systems are proposed for efficient implementation of neural networks. Neuromorphic computing system consists of the synaptic device, neuronal circuit, and neuromorphic architecture. With the two-terminal nonvolatile nanoscale memristor as the synaptic device and crossbar as parallel architecture, memristor crossbars are proposed as a promising candidate for neuromorphic computing. Herein, neuromorphic computing systems with memristor crossbars are reviewed. The feasibility and applicability of memristor crossbars based neuromorphic computing for the implementation of artificial neural networks and spiking neural networks are discussed and the prospects and challenges are also described.

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“…N ew architectural paradigms such as crossbars have been proposed, which utilize the memristors for making highly dense memory structures [5]. Additionally, their non-volatile characteristic solves today technology leakage pow er consumption problem, and all this along with their high-speed operation, makes them a promising memory technology [6].…”

Section: Introductionmentioning

confidence: 99%

Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies

Pouyan

Amat

Rubio

2018

IEEE Trans. Emerg. Topics Comput.

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Among the emerging technologies and devices for highly scalable and low power memory architectures, memristors are considered as one of the most favorable alternatives for next generation memory technologies. They are attracting great attention recently, due to their many appealing characteristics such as non-volatility and compatibility with CMOS fabrication process. But beside all memristor advantages, their drawbacks including manufacturing process variability and limited read/write endurance, could risk their future utilization. This paper will evaluate the impact of reliability concerns in lifetime of memristive crossbars and will present the design basis of two proposed reconfiguration approaches in memristive crossbarbased memories, in order to extend the system lifetime by utilizing available resources in an intense way and without need of failure recovery. It is observed that the adaptive reconfiguring approach can improve the crossbar reliability and extend its lifetime up to 65% in comparison with non-adaptive reconfiguration strategy.

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Overview of emerging memristor families from resistive memristor to spintronic memristor

Cited by 71 publications

References 63 publications

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

Neuromorphic Computing with Memristor Crossbar

Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies

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