Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Jiang, Fan; Stavola, Michael; Rohatgi, A.; Kim, D.; Holt, Jason K.; Atwater, Harry A.; Kalejs, J.P.

doi:10.1063/1.1598643

Cited by 75 publications

(49 citation statements)

References 20 publications

(22 reference statements)

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“…30 This conclusion is also consistent with the results of SIMS studies which found D to be below the detection limit for samples deuterated from SiN x layers. 27 ͓Deuterated materials were used in the studies by Dekkers et al to improve the detection limit ͑ϳ1 ϫ 10 15 cm −3 ͒ of SIMS.…”

Section: Resultssupporting

confidence: 81%

“…͑3͒. 30 Similarly, the results obtained in the present experiments for samples hydrogenated from SiN x layers are consistent with the rapid indiffusion of H predicted by Eq. ͑3͒.…”

Section: Diffusivity Of H During Hydrogenation Treatmentssupporting

confidence: 80%

“…3͑b͒ to the horizontal axis͔. Several samples that had been hydrogenated by a furnace anneal or RTP were analyzed in this way to determine the penetration depth of H. 30,45 The concentration of PtH 0 complexes for the sample whose spectra are shown in Fig. 3 20,24 Furthermore, an anneal of a few seconds at temperatures near 800°C is consistent with typical belt furnace anneals used by industry.…”

Section: A Introduction Of H By the Postdeposition Annealing Of A Simentioning

confidence: 87%

“…37 This strategy for the direct detection of a hydrogenated impurity in Si was used previously to confirm that H is introduced deeply into the Si bulk by the postdeposition annealing of a SiN x antireflection coating. 30 The present paper compares the introduction of hydrogen into Si by the postdeposition annealing of SiN x layers deposited and processed by different methods. We find that different processing strategies result in H concentrations that can differ by factors greater than 100.…”

Section: Introductionmentioning

confidence: 99%

“…30 This model system consists of floating-zone Si that contains Pt impurities. The combination of infrared ͑IR͒ spectroscopy with impurities that trap H is used in our experiments to determine the concentration and penetration depth of H in the Si host.…”

Section: Introductionmentioning

confidence: 99%

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Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN x surface layer was found to introduce H into the Si bulk with a concentration of ϳ10 15 cm −3 under the best conditions investigated here.

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Section: Resultssupporting

confidence: 81%

“…͑3͒. 30 Similarly, the results obtained in the present experiments for samples hydrogenated from SiN x layers are consistent with the rapid indiffusion of H predicted by Eq. ͑3͒.…”

Section: Diffusivity Of H During Hydrogenation Treatmentssupporting

confidence: 80%

Section: A Introduction Of H By the Postdeposition Annealing Of A Simentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Sio

Phang

Nguyen

et al. 2019

Progress in Photovoltaics

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Hydrogenation is a crucial step for improving the efficiency of multicrystalline silicon solar cells. In this work, we investigate the influence of different firing and annealing conditions on the efficacy of bulk hydrogenation in state-of-the-art high-performance multicrystalline silicon, for a range of hydrogen-containing dielectric layers. All of the dielectric films studied, including aluminium oxide, amorphous silicon, and silicon nitride deposited with different tools, yield similar bulk lifetimes when annealed at optimal conditions. However, the optimal conditions vary between films, depending on the film properties. The overall hydrogenation effect does not appear to be affected by the cooling rate used during firing or by the application of illuminated annealing, performed at 250°C under 8 sun illumination.Moreover, we monitor in situ changes in the recombination behaviour of grain boundaries during the hydrogenation process, using a micro-photoluminescence spectroscopy system with a temperature controlled stage. It is found that the hydrogenation reaction occurs at the annealing temperature range between 400°C and 500°C.

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Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon

Hallam

Hamer

Wenham

et al. 2020

Progress in Photovoltaics

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The understanding and development of advanced hydrogenation processes for silicon solar cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells, yet the properties of hydrogen in silicon are still poorly understood. This is largely due to the complex behaviour of hydrogen in silicon and its ability to exist in many different forms in the lattice. For commercial solar cells, hydrogen is introduced into the device through the deposition of hydrogen-containing dielectric layers and the subsequent metallisation firing process. This process can readily passivate structural defects such as grain boundaries but is ineffective at passivating numerous defects in silicon solar cells such as the boron-oxygen complex, responsible for light-induced degradation in p-type Czochralski silicon. This difficulty is due to the need to first form the boron-oxygen defect and also due to atomic hydrogen naturally occupying low-mobility and low-reactivity charge states. However, these challenges can be overcome using advanced hydrogenation processes incorporating excess carrier generation from illumination or current injection that increase the concentration of the highly mobile and reactive neutral charge state. As a result, after fast firing, additional low-temperature advanced hydrogenation processes incorporating illumination can be implemented to enable the passivation of difficult defects like the boron-oxygen complex. With the implementation of such processes for industrial silicon solar cells, efficiency improvements of 1.1% absolute can be obtained.

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Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Cited by 75 publications

References 20 publications

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon

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