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A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiN x surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN x film.

A monolayer HNb3O8 nanosheet was prepared. Its unique 2D structure promoted the efficient separation of the photo-generated carriers, leading to an enhanced photocatalytic hydrogen evolution.

Monolayer MoS is considered to be one of the best candidates for next generation electronics because of its ultra-thin body and direct band gap. However, MoS based transistors have relatively low photoresponsivity, field effect mobility and narrow response spectrum range, which hinder the application of MoS in optoelectronic devices. Here, based on the enhancement of localized surface plasmon resonance (LSPR), a simple method of depositing Ag nanoparticles on the MoS surface is used. By adjusting the size of Ag nanoparticles, the response spectral range of phototransistor is broadened from red to near ultra-violet. The photoresponsivity gains an increase of 470% up to 2.97 × 10 A W at 610 nm, and the response time also shows a decrease to some extent. The enhanced responsivity is comparable to those of devices encapsulated with high-quality dielectrics, and superior over other reported monolayer MoS in ambient conditions. The high responsivity and working current enables a wide range of device applications. This work provides a viable route towards performance enhancement of two-dimensional phototransistors.

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