Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

Pollack, G.; Richardson, W. H.; Malhi, S.D.S.; Bonifield, T.; Shichijo, H.; Banerjee, S.; Elahy, M.; Shah, A.H.; Womack, R.H.; Chatterjee, P.K.

doi:10.1109/edl.1984.25991

Cited by 82 publications

(16 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[39][40][41][42][43] Since Si-H bonds are weaker than N-H bonds, it is easier to break Si-H bonds compared to N-H bonds. It has been reported that hydrogen evolution from SiN films occurs at temperatures around 450 • C. 32,33,56 Therefore, during the ZnO channel layer growth at 460 • C, more hydrogen can escape from the Nr-stoic SiN film than from the N-rich film, because Nr-stoic SiN film has higher Si-H bonds and these are weaker than N-H bonds. This hydrogen would enter the ZnO film which is being grown.…”

Section: Resultsmentioning

confidence: 99%

“…[14][15][16][17][18][19][20][21][22][23] Silicon nitride (SiN) films grown by plasma enhanced chemical vapor deposition (PECVD) contain a significant amount of hydrogen [29][30][31] and it has been reported that these films can act as a source of atomic z E-mail: jjang@gist.ac.kr hydrogen. [32][33][34] A SiN film with high refractive index (silicon-rich film) has higher density of Si-H bonds compared to a low refractive index film (nitrogen-rich film). [35][36][37][38] Therefore, silicon-rich (Si-rich) films can be a better source of hydrogen compared to nitrogen-rich (N-rich) films at a lower ZnO film growth temperature, considering the fact that Si-H bonds are weaker than N-H bonds.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

Choi

Park

et al. 2012

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

ZnO Thin-film transistors (TFTs) on glass substrates were fabricated using plasma-deposited silicon nitride (SiN) gate insulators having two different compositions, namely nitrogen-rich and near-stoichiometric. The ZnO films were grown by metal organic chemical vapor deposition. The TFTs using near-stoichiometric SiN gate insulator exhibit better performance compared to those using nitrogen-rich SiN, and the performance improvement can be attributed to hydrogenation of the ZnO channel region by the gate dielectric. The positive impact of near-stoichiometric SiN gate insulator on TFT performance is further demonstrated in two more different types of ZnO TFTs. The two different types of TFTs are TFTs using a bilayer gate dielectric stack and TFTs using a MgZnO layer at channel/gate dielectric interface. Both types of TFTs exhibited excellent device characteristics.

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

Choi

Park

et al. 2012

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…16 Grain boundary passivation in poly-Si is also reported. 17 , 18 Similarly, Cu related defects in Ge are passivated by atomic hydrogen. 1 9 Electrical and optical properties of amorphous Si are improved by hydrogenation.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

Albin

Watkins

1989

MRS Proc.

View full text Add to dashboard Cite

Current-voltage characteristics of type Ia synthetic diamond, type Ub natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated. INTRODUCTIONDiamond has many unique properties distinguishing it from other solid-state materials. Its electrical, optical, thermal and mechanical properties are superior to those of other widely used materials and can be effectively exploited to develop electrical and optical devices in bulk diamond. 1 -

show abstract

“…4.6 Hydrogen passivation is an effective way to reduce the density of these defects and improves TFT's characteristics. Hydrogen can be supplied by many methods, such as H, plasma, " ' 2 PECVD silicon nitride deposition followed by high temperature annealing,' 4 or hydrogen ion implantation. 7 In this study we investigated the characteristics of TFTs as a function of the hydrogenation time for two different hydrogenation techniques: H,/Ar plasma and PECVD silicon nitride deposition.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the mechanisms of hydrogenation by rf plasma and SiNx

Wang

Sung

et al. 2000

SPIE Proceedings

View full text Add to dashboard Cite

In low temperature poly-silicon (LTPS) TFT's, the electrical characteristics are controlled by the inter-and intra-grain defects in the poly-silicon films. Hydrogen passivation is an effective way to reduce the density of these defects and can improve TFT's characteristics. In this study we investigated the characteristics of TFT's as a function of the hydrogenation time for two different hydrogenation techniques: H,/Ar plasma and PECVD silicon nitride film deposition. It was found that the characteristics of TFTs could be greatly improved after a very short period of time by both hydrogenation processes. In the H,/Ar RF plasma hydrogenation process, the characteristic parameters would be apparently improved within 30 min., and with only limited improvement after that. In the nitride hydrogenation process, the electrical characteristics of TFTs would be optimized within 5 min. of annealing, but started to degrade with longer annealing time. From these result, we concluded that the hydrogenation mechanism of these two techniques are very much different from each other.

show abstract

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

Cited by 82 publications

References 7 publications

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

Comparison of the mechanisms of hydrogenation by rf plasma and SiNx

Contact Info

Product

Resources

About