Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

Abstract

Current-voltage characteristics of type Ia synthetic diamond, type Ub natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated. INTRODUCTIONDiamond has many unique properties distinguishing it from other solid-state materials. Its electrical, optical, thermal and mechanical properties are superior to those of other widely used materials and can be effectively exploited to develop electrical and optical devices in bulk diamond. 1 -