Research Institute (ERSO/ITRI) Taiwan §1. AbstractThe amorphous silicon thin film transistors (TFTs) with four-photolithography process have been developed and studied. And a two-step-exposure (TSE) technology has been developed in application for process reduction. The result shows that a-Si TFT with four-photolithography process has great potential in mass production.
The two-step-exposure (TSE) technology has been developed in application for combination the active layer with metal II layer. And this TSE technology has been applied in our Reduced-Mask process (five-mask) for cost reduction. The result shows that this amorphous-silicon thin-film transistor with four-photolithography process has great potential in mass production.
Superconductivity of YBa2Cu3FxOy system prepared by using a mixed solid state and gel method. A consistent and non-zero resistance drop near 280K was achieved in the nominal YBa2Cu3FxOy system for x=l and 2, with complete loss of resistance at 90K. The metal-semiconductor transition occurs at x value between 2 and 3. Temporal room temperature superconductivity with zero resistance was observed in a YBa2Cu3F2Oy sample at 308K. The phenomenon lasted for three minutes and was not reproducible.
La-Ba-Cu-O and Y-Ba-Cu-O superconducting systems have been successfully prepared by gel techniques with high degree of chemical homogeneity. The precursor gel was synthesized from mixture of the corresponding metallic nitrates and di-carboxylic acids. The sintered oxides prepared from the different dicarboxylic acids were all Tc = 90K perovskite superconductors. However differences in electrical and magnetic properties were also observed. Effects due to the different acids elucidated by magnetic susceptibility measurements and X-ray diffraction analysis will be discussed.
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