Three types of 5-mask TFT array process have been compared and analyzed their characteristics including TFT performance, process window. etc. Results showing here indicate that a 5-mask TFT manufacturing process can be optimized with low cost, high production yield and high performance. These properties let the reduced mask TFT array process reveal a much higher potential in mass production.
Research Institute (ERSO/ITRI) Taiwan §1. AbstractThe amorphous silicon thin film transistors (TFTs) with four-photolithography process have been developed and studied. And a two-step-exposure (TSE) technology has been developed in application for process reduction. The result shows that a-Si TFT with four-photolithography process has great potential in mass production.
The two-step-exposure (TSE) technology has been developed in application for combination the active layer with metal II layer. And this TSE technology has been applied in our Reduced-Mask process (five-mask) for cost reduction. The result shows that this amorphous-silicon thin-film transistor with four-photolithography process has great potential in mass production.
Laser crystallization has been the most promising technology to manufacture low temperature poly-silicon (LTPS) thin film transistors (TFTs), since LTPS technology can make LCD panels with integrated drivers. Higher mobility and lower leakage current than the solid-phase crystallization (SPC) counterparts can be obtained by laser crystallization.[1] Excimer laser emit in the UV region with a short pulse duration (10-30ns), and high temperature can be developed in the Si-surface region, causing melting, without appreciate heating (400°C) with the glass substrate.[2] Laser processes should provide uniform and stable laser beam profiles to obtain uniform distribution of electrical characteristics of TFTs.In this study, the effects of laser beam profiles were investigated on the crystallization of poly-Si films. "One Pulse" laser crystallized poly-Si was analyzed by SEM and alpha-step to distinguish the effects of non-uniform laser beam profiles. Surface smoothness of poly-Si films with various laser-overlapping ratios was also measured to investigate the effects of laser beam profiles. Then the relationships of TFT characteristics and laser overlapping ratios will be discussed.
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