Abstract:In low temperature poly-silicon (LTPS) TFT's, the electrical characteristics are controlled by the inter-and intra-grain defects in the poly-silicon films. Hydrogen passivation is an effective way to reduce the density of these defects and can improve TFT's characteristics. In this study we investigated the characteristics of TFT's as a function of the hydrogenation time for two different hydrogenation techniques: H,/Ar plasma and PECVD silicon nitride film deposition. It was found that the characteristics of … Show more
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