Hot-carrier degradation of submicrometer p-MOSFETs with thermal/LPCVD composite oxide

Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

“…Two primary problems encountered in using LPCVD oxide were significant bulk trappings [3][4][5] and high defect density. 6 To reduce defect density, a stacked thermal LPCVD gate oxide technology was developed, 2,6 however, bulk trapping still has no satisfactory solution. In addition, improvement in the quality of Si/SiO 2 interface is also an inevitable concern.…”