Cox oxide capacitance per cm 2 ID, IDSAT d r a i n c u r r e n t , d r a i n c u r r e n t a t KS *D L ' BJ ' C ai ' j ' FB, ' T ' C' 'D W Z E 0 ' PF I-1 AL ' BG s a t u r a t i o n s i l i c o n d i e l e c t r i c c o n s t a n t distance between source and d r a i n substrate doping concentration bulk, channel charge per cm e l e c t r o n i c c h a r g e source or drain junction depth channel, drain voltages flatband, threshold voltages depletion width under the channel channel w i d t h f r e e s p a c e p e r m i t t i v i t y bulk Fermi level measured from t h e i n t r i n s i c l e v e l . ( F o r a p-channel device t h i s q u a n t i t y i s a negative number. ) f r e e -c a r r i e r m o b i l i t y a l o n g t h e channel channel length modulation backgate bias ( s u b s t r a t e t o source) 2 Recent progress in both photolithography and electron-beam lithography has l e d t o t h e f a b r i c at i o n of IGFET's with s h o r t ( l e s s t h a n 5wm) channel lengths. A s t h e d i stance between the source and drain becomes comparable w i t h the deplet i o n width, the equations (based on a one-dimensional analysis) f o r a longchannel IGFET a r e no longer a p p l i c a b l e . An important characterist i c of an IGFET t r a n s i s t o r i s t h e dependence of threshold. voltage on the source-to-substrate (backgate) bias. The one-dimensional theory predicts t h a t t h e s l o p e of t h e VT vs.,/-curve i s p r o p o r t i o n a l t o &,* and hence the VT v s . p l o t has been popularly used experimentally to determine the substrate doping under the g a t e . (I) For short-channel IGFETI s, t h i s method o f e v a l u a t i n g t h e s u b s t r a t e doping i s no longer accurate as shown i n F i g . 1. The s t r a i g h t l i n e i s p l o t t e d b a s e d on the long-channel equation, (1) Qwhere QB = J2Ks EoqND ( VBG-% F ) . The slope of t h e s t r a i g h t l i n e i s proport i o n a l t o .%. The c i r c l e s a r e measured values of the threshold voltage f o r d i f f e r e n t b a c k g a t e b i a s e s . I t i s obvious from t h i s f i g u r e t h a t experim e n t a l l y t h e s l o p e i s much lower, and t h e r e f o r e t h e e f f e c t i v e s u b s t r a t e doping derived from t h e VT vs.fix c h a r a c t e r i s t i c s does not c o r r e s p o n d t o t h e a c t u a l s u b s t r a t e doping under the gate.To overcome the discrepancy between theory and experiment depicted Y
The thermal ionization rates of electrons and holes at the silver centers in silicon have been measured using the dark‐capacitance transient technique. The ionization energies of the first donor and first acceptor state of silver are determined from the temperature dependences of the ionization rates. These are ED – EV = 0.395 eV and EC – EA = = 0.578 eV, respectively. The electric field dependences of the thermal ionization rates are also given.
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