Theory and experiments of low-frequency generation-recombination noise in MOS transistors

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

“…The spectrum which describes the G-R conuibution, in the case of a single time constant, can be expressed as equivalent noise voltage at the input [5] and depends on the time constant of the emission process q as…”

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

“…The difference between the predicted value of B = 1/3 [12,13] and the experimental value (less than 1/3) could be related to the fact that the theoretical B coefficient was determined for conventional planar devices with one gate, and the investigated devices are multiple-gate 3D devices. For these reasons, even if the traps in the Si film are related to a volume phenomenon, we determined the surface (effective) density of the identified traps, for which no assumptions on the value of the B coefficient and on the value of the depletion zone of the Si film are necessary.…”

Identification of the physical signatures of CDM induced latent defects into a DC–DC converter using low frequency noise measurements

“…The last term in Eq. (1) is related to generation-recombination (G-R) noise sources characterized by Lorentzian spectra and corresponding to the presence of recombination centers located either in oxides or sourcedrain junctions reacting as generation-recombination sites or traps for carriers [13]. A, B and C i are fitting parameters and f ci corresponds to the corner noise frequency associated to the ith G-R noise source.…”