Thc analog performance of the Thomson HSOI3-HD tcchnology has becn mcasurcd up to a total dose of 12 Mrad(Si) of ionizing radiation (60Co). The thrcshold voltage shift is -170 m V for p-channel and -20 m V for n-channel transistors. Transconductancc degradation is respectively 4% and 17%. Noise has been mcasurcd in thc 500 Hz-25 MHz bandwidth. In addition to thc I/f and whitc noise, a gencration-rccombination contribution appears in thc noisc spectrum. This contribution is scnsitivc to the bias applied to the backgatc and body electrodes. Thc whitc noisc incrcasc aftcr irradiation is 16% for p-channel and 35% for nchanncl transistors. p-channel transistors havc vcry low 1/f noise and arc less sensitive to irradiation effccts.
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