Charge trap generation in LPCVD oxides under high field stressing

Bhat, Navakanta; Apte, Pushkar P.; Saraswat, Krishna C.

doi:10.1109/16.485537

Cited by 19 publications

(12 citation statements)

References 15 publications

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“…However, some variations were probable to appear because electrical stressing can have several effects on chemical vapor deposited SiO 2 , such as the release of contaminants ͑hydrogen, for example͒ or breakage of weak bonds. 55,56 As with Ta 2 O 5 :Al 2 O 3 , it is verified that a kink appears after the 24 h stress, suggesting some sort of defect creation on SiO 2 , although to a much lower extent than for Ta 2 O 5 :Al 2 O 3 . This also happens simultaneously with charge trapping at the semiconductor/dielectric interface but in a less pronounced way than for Ta 2 O 5 :Al 2 O 3 ͑lower ⌬V G at 1 nA͒, which is expected given the improved interface properties of the PECVD SiO 2 .…”

Section: H828mentioning

confidence: 80%

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

Barquinha

Pereira

Gonçalves

et al. 2009

J. Electrochem. Soc.

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High performance transparent thin-film transistors deposited on glass substrates and entirely processed at a low temperature not exceeding 150°C are presented and analyzed in this paper. Besides being based on an amorphous oxide semiconductor, the main innovation of this work relies on the use of sputtered multicomponent oxides as dielectric materials based on mixtures of Ta 2 O 5 with SiO 2 or Al 2 O 3 . These multicomponent dielectrics allow to obtain amorphous structures and low leakage currents while preserving a high dielectric constant. This results in transistors with remarkable electrical properties, such as field-effect mobility exceeding 35 cm 2 V −1 s −1 , close to 0 V turn-on voltage, on/off ratio higher than 10 6 , and a subthreshold slope of 0.24 V decade −1 , obtained with a Ta 2 O 5 :SiO 2 dielectric. When subjected to severe current stress tests, optimized devices show little and reversible variation in their electrical characteristics. The devices presented here have properties comparable to the ones using plasma-enhanced chemical vapor deposited SiO 2 at 400°C, reinforcing the success of this amorphous multicomponent dielectric approach for low temperature, high performance, and transparent electronic circuits.Transparent electronics is one of the most fascinating and fastgrowing research areas since the first fully transparent thin-film transistors ͑TFTs͒ based on ZnO were presented in 2003. 1 A significant effort has been made in enhancing the devices' performance and lowering their maximum processing temperature 2 down to at least 150°C because this is normally seen as the upper limit for the socalled low temperature electronics, where low cost and flexible substrates are used. More recently, it was proved that multicomponent amorphous oxide semiconductors based on combinations of metallic cations with a ͑n − 1͒d 10 ns 0 ͑n Ն 4͒ electronic configuration, such as gallium indium zinc oxide ͑GIZO͒, 3-6 provide an enhanced performance over single binary oxides. Besides that, due to their amorphous structure, these materials also allow lower processing temperature, improved reproducibility and uniformity in large areas, and smoother surfaces when compared with polycrystalline materials. 7,8 The TFTs based on amorphous oxide semiconductors present remarkable characteristics, even when postprocessing temperatures of only 150°C are used. 3 However, most of the times the overall maximum processing temperature of these devices is much higher than 150°C and is dictated by the nature and the fabrication process of the dielectric layer. Most of the oxide semiconductor based TFTs rely on conventional dielectrics from Si technology, such as plasmaenhanced chemical vapor deposited ͑PECVD͒ SiO 2 9,10 and SiN x :H, 11,12 or even thermally grown SiO 2 when Si wafers are used as substrates. 3,13,14 While good performance can be obtained with these dielectrics when processed above 250-300°C, their properties are degraded when a temperature of around 150°C is established as the maximum for transistor fabrication....

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Section: H828mentioning

confidence: 80%

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

Barquinha

Pereira

Gonçalves

et al. 2009

J. Electrochem. Soc.

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“…Therefore to quantify the SIMS chlorine signal only one RSF is needed. From this, the chlorine SIMS RSF in SiO 2 is 9.2 ð 10 21 atoms cm 3 . Under the same experimental conditions the Cl RSF in Si (using an implanted standard) is 2.4 ð 10 23 atoms cm 3 .…”

Section: Resultsmentioning

confidence: 95%

“…From this, the chlorine SIMS RSF in SiO 2 is 9.2 ð 10 21 atoms cm 3 . Under the same experimental conditions the Cl RSF in Si (using an implanted standard) is 2.4 ð 10 23 atoms cm 3 . This significant difference in RSF could be a problem for quantification of samples with chlorine at the SiO 2 /Si interface.…”

Section: Resultsmentioning

confidence: 95%

XPS and SIMS depth profiling of chlorine in high‐temperature oxynitrides

Vanzetti¹,

Bersani²,

Sbetti³

et al. 2002

Surface & Interface Analysis

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Thin oxides deposited by low-pressure chemical vapour deposition (LPCVD) at high temperature are being widely investigated in VLSI technology to be used as possible substitutes for the usual thermal oxides. High-temperature oxide deposition involves reactions between N 2 O and dichlorosilane or silane. Considering possible active dielectric applications, the effect of further nitridation and annealing of deposited films has to be considered. Evaluation of the nitrogen content and the distribution profile of these dielectrics then becomes a relevant analytical issue. Moreover, it is also crucial to monitor the amount of possible contaminant species, such as chlorine, introduced by the precursor gases during the deposition. In this work we present the development of an analytical methodology for quantitative depth profiling of chlorine in thin oxides using SIMS and XPS. In addition, the evolution of chlorine distribution in an appropriate set of high-temperature oxide films submitted to nitridation and further thermal processes will be shown.

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“…The HO15-850 samples have the largest V th window due to their highest program/erase speed. 22 On the other hand, grain boundaries in crystallized gate dielectric films may act as high oxygen diffusivity paths and thus increase the interfacial layer thickness. Figure 8 shows the comparison of the read disturbance, tested at V g = 5 V and V d = 1 V. Samples with HfO x N y / SiO 2 stack tunnel dielectrics are more robust in terms of the read disturbance than that with a single HfO x N y layer.…”

Section: B Effects Of Various Hfo X N Y / Sio 2 Stacks As Tunnel Diementioning

confidence: 99%

Performance improvement of flash memories with HfOxNy∕SiO2 stack tunnel dielectrics

Lai¹,

Chang‐Liao²,

Wang³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Charge trap generation in LPCVD oxides under high field stressing

Cited by 19 publications

References 15 publications

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics

XPS and SIMS depth profiling of chlorine in high‐temperature oxynitrides

Performance improvement of flash memories with HfOxNy∕SiO2 stack tunnel dielectrics

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