Operation properties of polysilicon-oxide-nitrideoxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.Index Terms-Atomic layer deposition (ALD), charge trapping, Flash, HfAlO, nonvolatile memory, polysilicon-oxide-nitrideoxide-silicon (SONOS)-type.

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A tetragonal HfO2 (t-HfO2) with higher-k value and large band gap is investigated in this work. X-ray diffraction analysis shows a t-HfO2 can be formed by using Cl2 plasma treatment at the HfO2/Si interface after a post deposition annealing at 650 °C. The mechanisms of t-HfO2 formation can be attributed to the Si diffusion and oxygen vacancy generation which are formed by Cl2 plasma treatment. From the cross-sectional transmission electron microscope and capacitance-voltage measurement, the k value of this t-HfO2 is estimated to be about 35. The optical band gap value for t-HfO2 is similar to that of the monoclinic.

Organic semiconducting devices suffer from grain boundary scattering, which can be responsible for low mobility and even mask intrinsic transport properties. In this letter, we show that devices containing only single grains give electron mobility 2-3 orders higher than that of conventional film-structured polycrystalline organic semiconductor transistors. The devices contain single perylene-tetracarboxylic-dianhydride nanoparticles embedded inside gated-nanopore structures. Since there is no inter-grain scattering, we obtain the highest reported electron mobility values of 0.08 cm 2 /Vs at 300 K and 0.5 cm 2 /Vs at 80 K. Consequently, the devices, when illuminated with ultraviolet, also yield a previously unrecorded high value of external quantum efficiency of 3.5 Â 10 6. V