The temperature effect on current gain is presented for GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 C and decreases slightly at temperatures above 150 C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices.

Articles you may be interested inStudy of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy J. Vac. Sci. Technol. B 22, 838 (2004); 10.1116/1.1688354Effect of growth rate on surface morphology of heavily carbon-doped InGaAs

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Quality of low-pressure chemical-vapor-deposited ͑LPCVD͒ oxide and N 2 O-nitrided LPCVD ͑LN2ON͒ oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density D it-m and smaller stress-induced D it-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO 2 interface due to interfacial nitrogen incorporation.

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