Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials 2007
DOI: 10.7567/ssdm.2007.p-7-9
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Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays

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“…According to the calibrated model and the experimental data [8][9][10][11][12], Fig. 4 shows the current-voltage (I-V) characteristics for the sample with 90 nm nanogap by two fabricated methods, where the Vg varies from 0 V to 300 V. The solid line indicates the data of FIB technique, the dashed-line is the HE results, and symbols are calibrated data.…”
Section: Resultsmentioning
confidence: 99%
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“…According to the calibrated model and the experimental data [8][9][10][11][12], Fig. 4 shows the current-voltage (I-V) characteristics for the sample with 90 nm nanogap by two fabricated methods, where the Vg varies from 0 V to 300 V. The solid line indicates the data of FIB technique, the dashed-line is the HE results, and symbols are calibrated data.…”
Section: Resultsmentioning
confidence: 99%
“…We first use two methods to fabricate 90 nm nanogap in the palladium (Pd) thin-film strips. One is formed by FIB technique and the other is by hydrogen embrittlement [8][9][10][11][12]. All process steps are compatible with contemporary integrated circuit technology.…”
Section: Computational Model and Simulation Methodsmentioning
confidence: 99%
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