Historical perspective on radiation effects in III-V devices

Weatherford, T.R.; Anderson, W. T.

doi:10.1109/tns.2003.813124

Cited by 32 publications

(14 citation statements)

References 81 publications

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“…Wide bandgap semiconductors such as ilmenite are commonly attributed to be "radiation tolerant" with regard to ionization effects as compared to silicon because of their higher ionization energies for electron-hole pair creation. 19 However, the electron-hole pairs created per unit length of an ionizing particle's path through a material are also strongly dependent on the density of the material. 19 In the case of ilmenite, E g is about 2.58 eV.…”

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confidence: 99%

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Influence of proton radiation on the nonlinear current-voltage characteristics of pulsed laser deposited ilmenite-hematite thin films

Padmini

Tompkins

Shojah-Ardalan

et al. 2005

Journal of Elec Materi

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Ilmenite-hematite (IH) [(1-x)FeTiO 3 ·xFe 2 O 3 ] solid solutions are unique classes of materials showing both magnetic and semiconducting properties, which make them potential candidates for novel applications in microelectronics and spintronics. This paper focuses on their varistor behavior before and after exposure to 40 MeV and 10 MeV proton radiations up to a fluence of 5 ϫ 10 10 p/cm 2 . The IH films are tolerant to these irradiations with little significant change to the nonlinear current-voltage characteristics. The switching voltage of the devices is in the regime of practical applications, and the radiation tolerance makes these materials suitable for aerospace applications.Radiation-induced damage has become an important field of study and continues to gain importance because of the need to protect electronic components, devices, and microelectronic circuits from the potentially catastrophic effects of radiation on their performance. 1 Space systems often require electronics that can operate in a high-radiation environment. This radiation may result from particles trapped in planetary magnetic fields, galactic cosmic rays, or high-energy protons from solar events. Exposure to high energetic particles can degrade device performance and ultimately lead to component failure. The primary effects of natural space radiation on spacecraft electronics are total ionizing dose effects, displacement damage, and single event upsets. 2 Radiation can alter the characteristics of electronic materials and the performance of electronic devices made from these materials by the mechanisms of ionization and atomic displacement. The displacement damage takes place by nuclear interactions and the ionization damage by atomic interactions in which energy deposited by the ionizing radiations creates electron-hole pairs. Semiconductor-based sensors, such as varistors and other current sensitive sensors, have applications in aerospace and other hostile environments for power and other applications. The radiation effects on device performance are important in these applications because the elevated radiation levels associated with these environments can produce both ionization and displacement damage.

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confidence: 99%

“…19 However, the electron-hole pairs created per unit length of an ionizing particle's path through a material are also strongly dependent on the density of the material. 19 In the case of ilmenite, E g is about 2.58 eV. This is over 2.5 times the value for silicon, and the density of ilmenite is about 4.72 g/cm 3 compared to silicon at 2.32 g/cm 3 .…”

mentioning

confidence: 99%

Influence of proton radiation on the nonlinear current-voltage characteristics of pulsed laser deposited ilmenite-hematite thin films

Padmini

Tompkins

Shojah-Ardalan

et al. 2005

Journal of Elec Materi

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“…These can result in shifts of the threshold voltage, increases in static current leakage, errors in bit reading, and, eventually, in complete circuit and/or system failure [1], [2]. Strategies for increasing the radiation resilience of electronic devices typically include improving oxide quality [4], adopting silicon-on-insulator technology [5], and/or using III-V transistors with no oxide layers [6]. Commercial microelectronic devices can often withstand TID exposure to about 1-100 krad(SiO 2 ), and radiation hardened devices typically can withstand doses well above 100 krad(SiO 2 ) [7].…”

Section: Total-ionizing-dose Effects On Thresholdmentioning

confidence: 99%

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Liu

Zhang

Liang

et al. 2017

IEEE Electron Device Lett.

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-The 1T polytype of TaS 2 exhibits voltagetriggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T -TaS 2 at doses up to 1 Mrad (SiO 2 ). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T -TaS 2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T -TaS 2 , are promising for applications in high radiation environments.

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“…4. Since SEBL contributes to the charge collection at the drain, it adds to the "particle-deposited'" charge, thereby resulting in charge enhancement [12]. Table I depicts the charge enhancement caused because of SEBL across the technologies.…”

Section: Conventional Transistormentioning

confidence: 99%

SEU reliability analysis of advanced deep-submicron transistors

Jain

Vasi

Lal

2005

IEEE Trans. Device Mater. Relib.

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Abstract-A systematic evaluation of the single-event-upset (SEU) reliability of the advanced technologies-high-gate dielectric, elevated source-drain (E-SD), and lateral asymmetric channel (LAC) MOSFETs is presented for the first time in this work. Our simulations results gives a clear view of how the short channel effects in a device governs its SEU reliability and how this reasoning evolves at the circuit level. It is shown that devices with worsened short-channel effects (high-gate dielectric transistors) have a significantly reduced SEU-reliability in contrast to the devices with controlled short-channel effects (LAC and E-SD) or even a conventional device.Index Terms-charge enhancement, elevated source-drain, high-, lateral asymmetric channel (LAC), single event upset (SEU), short channel effects, scaling, SRAM.

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Historical perspective on radiation effects in III-V devices

Cited by 32 publications

References 81 publications

Influence of proton radiation on the nonlinear current-voltage characteristics of pulsed laser deposited ilmenite-hematite thin films

Influence of proton radiation on the nonlinear current-voltage characteristics of pulsed laser deposited ilmenite-hematite thin films

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

SEU reliability analysis of advanced deep-submicron transistors

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