Highly sensitive MEMS magnetic field sensors with integrated powder-based permanent magnets

Niekiel, Florian; Su, Jingxiang; Bodduluri, Mani Teja; Lisec, T.; Blohm, Lars; Pieper, Isa; Wagner, Bernhard; Lofink, Fabian

doi:10.1016/j.sna.2019.111560

Cited by 30 publications

(17 citation statements)

References 32 publications

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“…While the magnetic sensors based on nitrogen-vacancy by using the spinning effect are widely investigated [127], diamond MEMS magnetic sensor provides a different scheme using mechanical effect. The principles of MEMS magnetic sensors can be Lorentz force [128] or torque force [129] or effective Young's modulus change (delta-E effect) of the MEMS resonator under applied magnetic fields [130]. The merits of MEMS-based magnetic field sensors are the small dimensions, batch fabrication, flexibility in device design, and integration with electronics.…”

Section: Diamond Mems Magnetic Sensormentioning

confidence: 99%

Progress in semiconductor diamond photodetectors and MEMS sensors

Liao

2021

Functional Diamond

159

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Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily superior to those of the currently available wide-bandgap semiconductors for deep-ultraviolet (DUV) photoelectronics and microelectromechanical systems (MeMs). the wide-bandgap energy of diamond offers the intrinsic advantage for solar-blind detection of DUV light. the recent progress in high-quality single-crystal diamond growth, doping, and devices design have led to the development of solar-blind DUV detectors satisfying the requirement of high Sensitivity, high Signal-to-Noise ratio, high spectral Selectivity, high Speed, and high Stability. On the other hand, the outstanding mechanical hardness, chemical inertness, and intrinsic low mechanical loss of diamond enable the development of MeMs sensors with boosted sensitivity and robustness. the micromachining technologies for diamond developed in these years have opened the avenue for the fabrication of high-quality single-crystal diamond mechanical resonators. in this review, we report on the recent progress in diamond DUV detectors and MeMs sensors, which includes the device principles, design, fabrication, micromachining of diamond, and devices physics. the potential applications of these sensors and a perspective are also described.

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Section: Diamond Mems Magnetic Sensormentioning

confidence: 99%

Progress in semiconductor diamond photodetectors and MEMS sensors

Liao

2021

Functional Diamond

159

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“…The cantilever curvature α is neglected in our structures as the out-of-plane stress gradient of the hetero-layer Pt/ScAlN is small compared to the in-plane stresses. Since each layer of the hetero-structure has its own unique properties, Equations (9) and (10) are extended by:…”

Section: Modal Analysismentioning

confidence: 99%

“…Solving this issue is possible by binning the eigenfrequencies based on the histogram. However, because the bin size is not constant, it has to be adjusted in accordance to Equations (9) and (10). For cantilevers, the eigenfrequencies scale with κ 2 n,c and so the bin size must too.…”

Section: Modal Analysismentioning

confidence: 99%

“…Especially in the field of MEMS-based magnetoelectric sensors, major advances have been made recently, since, for the detection of magnetic fields in the pico tesla range at room temperature, magnetoelectric sensors (MES) are a promising technology [8][9][10] with possible applications in bio-medicine [11,12] and non-destructive testing [13]. Such a sensor correlates a magnetic input to an electric output signal, and the quotient of in-and output is the magnetoelectric coefficient.…”

Section: Introductionmentioning

confidence: 99%

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Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Krey

Hähnlein

Tonisch

et al. 2020

Sensors

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Magnetoelectric sensors provide the ability to measure magnetic fields down to the pico tesla range and are currently the subject of intense research. Such sensors usually combine a piezoelectric and a magnetostrictive material, so that magnetically induced stresses can be measured electrically. Scandium aluminium nitride gained a lot of attraction in the last few years due to its enhanced piezoelectric properties. Its usage as resonantly driven microelectromechanical system (MEMS) in such sensors is accompanied by a manifold of influences from crystal growth leading to impacts on the electrical and mechanical parameters. Usual investigations via nanoindentation allow a fast determination of mechanical properties with the disadvantage of lacking the access to the anisotropy of specific properties. Such anisotropy effects are investigated in this work in terms of the Young’s modulus and the strain on basis of a MEMS structures through a newly developed fully automated procedure of eigenfrequency fitting based on a new non-Lorentzian fit function and subsequent analysis using an extended Euler–Bernoulli theory. The introduced procedure is able to increase the resolution of the derived parameters compared to the common nanoindentation technique and hence allows detailed investigations of the behavior of magnetoelectric sensors, especially of the magnetic field dependent Young‘s modulus of the magnetostrictive layer.

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“…Table 1 summarizes the sensing principle and type for various micro magnetic sensors. For example, an MS, as proposed by Niekiel [9], was fabricated using the MEMS technology. The MEMS MS, which was a magnetic-resonant type, contained a piezoelectric resonator that integrated permanent magnets.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Shih

Tsai

et al. 2021

Sensors

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A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.

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Highly sensitive MEMS magnetic field sensors with integrated powder-based permanent magnets

Cited by 30 publications

References 32 publications

Progress in semiconductor diamond photodetectors and MEMS sensors

Progress in semiconductor diamond photodetectors and MEMS sensors

Automated Parameter Extraction Of ScAlN MEMS Devices Using An Extended Euler–Bernoulli Beam Theory

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

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