Progress in semiconductor diamond photodetectors and MEMS sensors

Liao, Meiyong

doi:10.1080/26941112.2021.1877019

Cited by 149 publications

(64 citation statements)

References 131 publications

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“…Additionally, the external quantum efficiency (EQE), which is the number of free carriers generated by one photon, of the devices was calculated from the measured responsivity (R) as EQE = Rhc/eλ and plotted against the wavelength of the incident light (Figure 18). Here, e, h, λ, and c are electron charge, Planck's constant, wavelength, and speed of light, respectively [67].…”

Section: Photodetection Characterizations Of Uv Photodetectors Based On Zno Nanorodsmentioning

confidence: 99%

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

et al. 2021

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Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV–VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.

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Section: Photodetection Characterizations Of Uv Photodetectors Based On Zno Nanorodsmentioning

confidence: 99%

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

et al. 2021

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“…Wide band-gap semiconductors (WBG) such as (SiC, GaN, ZnO, TiOX 10 – 14 are currently considered the best candidates for UV photodetection, due to their chemical stability and high resistance, but their insensitivity to visible light reduce their field of applications.…”

Section: Introductionmentioning

confidence: 99%

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Bonavolontà

Vettoliere

Falco

et al. 2021

Sci Rep

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Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current–voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained results indicate that the rGO based device can be useful for broadband radiation detection compatible with silicon device technology.

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“…However, when the thickness of the AlN layer is relatively thin, due to the interface defects between metal/AlN/GaN the tunneling effect, electrons can tunnel the barrier, even if its energy is not very formidable, resulting in a large photocurrent. [ 35,36 ]…”

Section: Resultsmentioning

confidence: 99%

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Liu

Shi

Wang

et al. 2021

Adv Materials Technologies

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Core–shell heterojunction structure is a feasible approach to optimize the optoelectronic performance of devices by combining the advantages of different materials. In this work, GaN/AlN core–shell heterojunction microwire‐based photodetector (PD) has been fabricated, and appropriate epitaxy growth of AlN can improve the performances of PDs. Compared with pure GaN microwire device, the enhanced responsivity, sensitivity, detectivity, and external quantum efficiency value of 4160 A W−1, 1.88 × 107%, 3.93 × 1012 Jones, and 4.07 × 106% are obtained with 5 nm thick AlN. Meanwhile, a rise/decay time of 25/16 ms is possessed. In addition, the responsivity and detectivity are increased with an acceptable decrease in sensitivity when the exciting light intensity decreases. The effective advances of PDs are benefited from the increased Schottky barrier height, the built‐in electric field that promotes the separation of photogenerated electron‐hole pairs, and direct heteroepitaxial growth high crystal quality GaN/AlN core/shell structure, which will effectively passivate the surface of GaN microwire by covering AlN. This study sheds some light on fabricating high‐performance microwire‐based PDs.

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Progress in semiconductor diamond photodetectors and MEMS sensors

Cited by 149 publications

References 131 publications

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

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