MEMS sensors based on magnetoelectric composites have attracted great interest due to their capability to detect weak magnetic fields, showing high potential in applications like biomagnetic field detection and magnetic particle imaging. This paper reports on a scandium aluminum nitride thin film-based MEMS magnetoelectric sensor. The sensor consists of a polycrystalline silicon cantilever with a size of 1000 μm × 200 μm covered by a piezoelectric Al0.73Sc0.27N and a magnetostrictive (Fe90Co10)78Si12B10 thin film. The performance of the presented sensor is investigated based on the magnetoelectric (ME) voltage coefficient, voltage noise density, and limit of detection and compared to the characteristics of the aluminum nitride thin film-based ME sensor with the same layout and fabrication technology. By using an Al0.73Sc0.27N thin film with a higher piezoelectric activity instead of AlN in MEMS ME sensors, the ME voltage coefficient of (1334 ± 84) V/cm Oe in resonance is almost double, thereby lowering the requirements for the electronic system. The limit of detection of (60 ± 2) pT/Hz0.5 remains unchanged due to the dominant thermomechanical noise in resonance.
Magnetomyography (MMG) with superconducting quantum interference devices (SQUIDs) enabled the measurement of very weak magnetic fields (femto to pico Tesla) generated from the human skeletal muscles during contraction. However, SQUIDs are bulky, costly, and require working in a temperature-controlled environment, limiting wide-spread clinical use. We introduce a lowprofile magnetoelectric (ME) sensor with analog frontend circuitry that has sensitivity to measure pico-Tesla MMG signals at room temperature. It comprises magnetostrictive and piezoelectric materials, FeCoSiB/AlN. Accurate device modelling and simulation are presented to predict device fabrication process comprehensively using the finite element method (FEM) in COMSOL Multiphysics. The fabricated ME chip with its readout circuit was characterized under a dynamic geomagnetic field cancellation technique. The ME sensor experiment validate a very linear response with high sensitivities of up to 378 V/T driven at a resonance frequency of f res = 7.76 kHz. Measurements show the sensor limit of detections of down to 175 pT/ÝHz at resonance, which is in the range of MMG signals. Such a small-scale sensor has the potential to monitor chronic movement disorders and improve the end-user acceptance of human-machine interfaces.
Magnetoelectric thin-film sensors based on the delta-E effect have widely been reported for the detection of low frequency and small amplitude magnetic fields. Such sensors are usually fabricated with microelectromechanical system technology, where aluminum nitride (AlN) is the established piezoelectric material. Here, we present aluminum scandium nitride (AlScN) for delta-E effect sensors instead and compare it with AlN using two sensors of identical design. The sensors are experimentally and theoretically analyzed regarding sensitivity, noise, limit of detection (LOD), and resonator linearity. We identify the influence of the dominating piezoelectric coefficients dij and other material parameters. Simulations and measurements demonstrate that, in contrast to the conventional direct operation of magnetoelectric sensors, a sensitivity increase ∝dij2 and a LOD improvement ∝dij−1 can be achieved if thermal–mechanical noise is dominant. In the present case, an 8× improved sensitivity and LOD are measured with AlScN at small excitation amplitudes. This factor decreases with increasing amplitude and resonator nonlinearities. The overall minimum LOD does not change due to an earlier onset of magnetic noise in the AlScN sensor. All in all, this study reveals the influence of the piezoelectric material on the signal and noise of delta-E effect sensors and the potential of AlScN to significantly improve sensitivity.
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