Highly efficient core–shell CuInS2–Mn doped CdS quantum dot sensitized solar cells

Luo, Jirun; Wei, Huiyun; Huang, Qingli; Hu, Xiao; Zhao, Hai-Ming; Yu, Richeng; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

doi:10.1039/c3cc40715b

Cited by 163 publications

(123 citation statements)

References 24 publications

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“…[13][14][15][16] To eliminate/minimize trap-state defects in QD sensitizers and suppress the related charge recombination, overcoating an inorganic shell with wider band gap (in particular ZnS) around QDs to form type-I core/shell structure is a well-established approach. 12,[17][18][19][20][21] Unfortunately, in spite of the benecial suppression of charge recombination dynamics, the formed shell layer with wide band gap in this core/shell structure would retard the charge extraction rate simultaneously, and deteriorate the photovoltaic performance accordingly.…”

mentioning

confidence: 99%

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Yue

Rao

et al. 2018

RSC Adv.

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one sun irradiation, which was enhanced by 21%, and 82% in comparison to those of CIS/ZnS, and CIS based solar cells, respectively. In comparison to cell device assembled by the plain CIS and core/shell structured CIS/ZnS, the enhanced photovoltaic performance in ZCIS QDSCs is mainly ascribed to the faster photon generated electron injection rate from QD into TiO 2 substrate, and the effective restraint of charge recombination, as confirmed by incident photon-to-current conversion efficiency (IPCE), open-circuit voltage decay (OCVD), as well as electrochemical impedance spectroscopy (EIS) measurements.

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mentioning

confidence: 99%

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Yue

Rao

et al. 2018

RSC Adv.

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“…[9][10][11][12] Slightly better efficiencies can be obtained for double-layered core-shell binary sensitizers. [13][14][15] In contrast to binary sensitizers, ternary semiconductors are a relatively unexplored subject. Ternary semiconductors are more difficult to synthesize because there are three elements involved and the stoichiometry must be correct.…”

mentioning

confidence: 99%

Ag₃SbS₃Liquid-Junction Semiconductor-Sensitized Solar Cells

Chou

Suriyawong

Aragaw

et al. 2016

J. Electrochem. Soc.

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We present a new ternary semiconductor absorber material -Ag 3 SbS 3 -for solar cells. Ag 3 SbS 3 nanoparticles were grown on mesoporous TiO 2 electrodes using a two-stage successive ionic layer adsorption reaction process. Post annealing transformed the double-layered structure into the Ag 3 SbS 3 phase. The energy gap of the synthesized Ag 3 SbS 3 nanoparticles is estimated to be ∼1.5-1.7 eV. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized nanoparticles using a polysulfide electrolyte. The best cell yielded a short-circuit current density J sc of 11.47 mA/cm 2 , an open-circuit voltage V oc of 0.33 V, a fill factor FF of 38.92%, and a power conversion efficiency η of 1.47% under 1 sun. The external quantum efficiency (EQE) spectrum covered the spectral range of 300-850 nm with a maximal EQE = 80% at λ = 500 nm. At the reduced light intensity of 13% sun, the η increased to 2.18% with J sc = 2.46 mA/cm 2 (which could be normalized to 18.9 mA/cm 2 ). The respectable photovoltaic performance indicates that Ag 3 SbS 3 could be a potential solar absorber material. Semiconductor-sensitized solar cells (SSSCs) have drawn a great deal of attention due to their potential application as a low-cost alternative to Si-based photovoltaic sources. The key component of an SSSC is a mesoporous oxide nanoparticles (usually TiO 2 ) coated with a layer of nanostructured light-absorbing semiconductor. An electrolyte is filled into the porous space of the TiO 2 electrode to complete the charge redox process. Depending on the electrolyte, SSSCs can be classified into two types: solid-state SSSCs (also referred to as extremely thin absorber solar cell-ETA) or liquid-junction SSSCs. The most widely used semiconductor absorber materials are the binary metal chalcolgenides such as CdS, CdSe, PbS, Ag 2 S, Sb 2 S 3 , etc.1-5 These nanostructured semiconductor sensitizers have several advantages including (1) tunable absorption range due to the quantumsize effect, 6 (2) large optical absorption coefficient, 7 and (3) multiple electron-hole pairs produced by a single photon. 8 The highest efficiencies achieved for single-layered binary metal chalcogenide sensitizers are ∼5-7%.9-12 Slightly better efficiencies can be obtained for double-layered core-shell binary sensitizers. [13][14][15] In contrast to binary sensitizers, ternary semiconductors are a relatively unexplored subject. Ternary semiconductors are more difficult to synthesize because there are three elements involved and the stoichiometry must be correct. There are several advantages for ternary semiconductor sensitizers: (1) the energy gap E g can be tuned by varying the ratio among the three elements, (2) large optical absorption coefficients near 10 4 -10 5 cm −1 , and (3) many ternary semiconductors have E g near the optimal E g ∼ 1.4 eV for an optimal solar absorber. 16 However, only a small number of ternary semiconductors, such as CuSbS 2 , Pb-Sb-S, AgInS 2 , AgBiS 2 etc., have been employed as solar absorbers in SSSCs to date (the wi...

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“…100,101 Nowadays, ZnS passivation has become a routine surface passivation method for various QDSSCs, such as CdSe/CdS, and Mn-doped CuInS 2 , and the PCE of the QDSSCs has been improved largely. 105,106 For example, a PCE as high as 8.1% was reported for CuInSe QDSSCs with ZnS surface passivation. 107 The effects of the ZnS surface passivation and the mechanism for improving the photovoltaic performance of QDSSCs were studied systematically and deeply.…”

Section: Surface Passivationmentioning

confidence: 99%

Recent progress on quantum dot solar cells: a review

2016

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Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Highly efficient core–shell CuInS2–Mn doped CdS quantum dot sensitized solar cells

Cited by 163 publications

References 24 publications

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Ag₃SbS₃Liquid-Junction Semiconductor-Sensitized Solar Cells

Recent progress on quantum dot solar cells: a review

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Highly efficient core–shell CuInS2–Mn doped CdS quantum dot sensitized solar cells

Cited by 163 publications

References 24 publications

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Comparative advantages of Zn–Cu–In–S alloy QDs in the construction of quantum dot-sensitized solar cells

Ag3SbS3Liquid-Junction Semiconductor-Sensitized Solar Cells

Recent progress on quantum dot solar cells: a review

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Ag₃SbS₃Liquid-Junction Semiconductor-Sensitized Solar Cells