Recent progress on quantum dot solar cells: a review

Abstract

Abstract. Semiconductor quantum dots (QDs) have a potential to increase the power conversion efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent advances in self-assembled QD solar cells (QDSCs) and colloidal QDSCs are reviewed, with a focus on understanding carrier dynamics. For intermediate-band solar cells using selfassembled QDs, suppression of a reduction of open circuit voltage presents challenges for further efficiency improvement. This reduction mechanism is discussed based on recent reports. In QD sensitized cells and QD heterojunction cells using colloidal QDs well-controlled heterointerface and surface passivation are key issues for enhancement of photovoltaic performances. The improved performances of colloidal QDSCs are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

“…In this work, we apply the QD-aware physics-based model firstly proposed in [15] to the study of InAs/GaAs QDSC exploiting selective Si doping. QD doping is extensively investigated as an attractive means to control photocarrier dynamics and improve QDSC performance (see, e.g., the recent review in [17] and the references therein). The present work extends the analysis already proposed in [18] on the interplay between doping and recombination processes in QDSCs and provides an experimental-based validation to the conclusions in [18].…”

Increasing conversion efficiency of two-step photon up-conversion solar cell with a voltage booster hetero-interface

“…The output voltage of the series junctions becomes high and the photocurrent increases. Another method of utilizing the multi-bandgap system is through an intermediate band (IB) SC 6 – 9 , in which additional bands inserted in the bandgap can absorb below-gap photons corresponding to transitions from the valence band (VB) to the IB and from the IB to the conduction band (CB), as well as the ordinal interband absorption from the VB to the CB. IBSCs are a promising SC device for realising ultrahigh conversion efficiencies greater than 63% under maximum concentration and 47% even under one-sun illumination 6 .…”

Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO2 Solar Cells

“…Renewable and low-cost energy is increasingly demanded which has created some remarkable research in the field of next-generation solar cells. Semiconductor quantum dot (QD)-sensitized solar cells (QDSSCs) have attracted much interest because they show some advantages compared to dye-sensitized solar cells [ 1 , 2 , 3 , 4 ]. QDs are beneficial because of their high optical absorption coefficients, multiple exciton generation, and large intrinsic dipole moments [ 4 , 5 , 6 ].…”

“…Semiconductor quantum dot (QD)-sensitized solar cells (QDSSCs) have attracted much interest because they show some advantages compared to dye-sensitized solar cells [ 1 , 2 , 3 , 4 ]. QDs are beneficial because of their high optical absorption coefficients, multiple exciton generation, and large intrinsic dipole moments [ 4 , 5 , 6 ]. It has been expected that the maximum theoretical efficiency of QD-based solar cells would be 44% [ 7 ], which is much higher than that of traditional single-junction silicon solar cells (about 30%) [ 8 ].…”